SEMICONDUCTOR IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME
First Claim
1. A semiconductor image sensor module comprising:
- a first semiconductor chip including an image sensor in which a plurality of pixels are arranged regularly and each of said pixels is constituted by a photoelectric conversion element and transistors; and
a second semiconductor chip including an analog/digital converter array composed of a plurality of analog/digital converters,wherein the first semiconductor chip and the second semiconductor chip are laminated.
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Accused Products
Abstract
A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.
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Citations
13 Claims
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1. A semiconductor image sensor module comprising:
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a first semiconductor chip including an image sensor in which a plurality of pixels are arranged regularly and each of said pixels is constituted by a photoelectric conversion element and transistors; and a second semiconductor chip including an analog/digital converter array composed of a plurality of analog/digital converters, wherein the first semiconductor chip and the second semiconductor chip are laminated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor image sensor module comprising:
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a first semiconductor chip including an image sensor in which a plurality of pixels are arranged regularly and each of said pixels is constituted by a photoelectric conversion element and transistors; and a fourth semiconductor chip including an analog type nonvolatile memory array composed of a plurality of analog type nonvolatile memories, wherein an amount of information corresponding to an amount of accumulated electric charge is stored by said analog type nonvolatile memories.
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11. A manufacturing method of a semiconductor image sensor module, comprising the steps of:
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forming a first semiconductor chip provided with an image sensor in which a plurality of pixels, each of which is constituted by a photoelectric conversion element and transistors, are regularly arranged two-dimensionally; forming a second semiconductor chip provided with an analog/digital converter array which is composed of a plurality of analog/digital converters; and laminating said first semiconductor chip and said second semiconductor chip and bonding the pixels of said image sensor and said analog/digital converters by means of bumps with the analogue/digital converters faced downward or connecting the pixels and the analogue/digital converters by means of through-holes which pass through a wafer vertically with respect to an LSI chip surface. - View Dependent Claims (12)
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13. A manufacturing method of a semiconductor image sensor module, comprising the steps of:
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forming a first semiconductor chip provided with an image sensor in which a plurality of pixels, each of which is constituted by a photoelectric conversion element and transistors, are regularly arranged two-dimensionally; forming a fourth semiconductor chip provided with an analog nonvolatile memory array composed of a plurality of analog type nonvolatile memories; and laminating said first semiconductor chip and said fourth semiconductor chip and connecting the pixels of said image sensor and said analog type nonvolatile memories.
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Specification