MULTI-BAND SUB-WAVELENGTH IR DETECTOR HAVING FREQUENCY SELECTIVE SLOTS AND METHOD OF MAKING THE SAME

• US 20100276595A1
• Filed: 04/30/2009
• Published: 11/04/2010
• Est. Priority Date: 04/30/2009
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Gregoire, Daniel J., Stratton, Frederic P., Kirby, Deborah J., Puschell, Jeffery J., De Lyon, Terence J., Chang, David T.
• Granted Patent: US 7,923,689 B2
• Time in Patent Office: Days
• US Class Current: 250/339.02
• CPC Class Codes: G02B 5/208 for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/0236 Special surface textures

Abstract

In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

Claims

1. A multiband infrared (IR) detector array, comprising:

a metallic surface having a plurality of periodic resonant structures, each periodic structure configured to resonantly transmit electromagnetic energy in a distinct frequency band; and

a plurality of pixels each comprising at least first and second resonant structures corresponding to first and second wavelengths, respectively,

wherein, for each pixel, the first and second resonant structures each have respective first and second detectors associated therewith,

wherein the first and second resonant structures are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector, wherein the first and second detectors comprise mercad telluride.

2. The IR detector array of claim 1, wherein each periodic resonant structure is configured to collect energy incident on an area larger than said each periodic resonant structure and to focus said incident energy into a smaller localized area associated with a detector,

wherein focusing the energy incident on said larger area onto the smaller localized area of the detector reduces noise energy received by the detector so as to improve a signal-to-noise ratio associated therewith.

3. The IR detector array of claim 1, wherein said first and second detectors comprise Hg₍₁₋

x)Cd_xTe, where x is about 0.21.

4. The IR detector array according to claim 2, wherein, for each pixel, said first and second resonant structures are positioned such that they collect energy incident on a larger substantially common area associated with the pixel.

5. The IR detector array of claim 1, wherein the first and second resonant structures each comprise a different sized slot such that each of the slots are resonant to electromagnetic energy at a different frequency.

6. The IR detector array according to claim 5, wherein the different sized slots comprise either rectangular slots, bowtie slots, crosses, or bowtie crosses.

7. The IR detector array of claim 1, wherein each of the plurality of pixels further comprise a third resonant structure corresponding to a third wavelength and having a third detector associated therewith, wherein the third resonant structure is arranged such that essentially all of the electromagnetic energy at the third wavelength passes through the third resonant structure onto the third detector.

8. The IR detector array of claim 7, wherein the first, second, and third resonant structures comprise differently sized resonant slots such that each of the resonant slots are resonant to electromagnetic energy at a different frequency.

9. A method of forming a multiband infrared (IR) detector array, the method comprising:

forming an IR absorber material on a substrate;

forming a plurality of mesas in the absorber material;

depositing an oxide layer on the substrate; and

forming a metallic surface on the oxide layer so as to define a pixel comprising a plurality of apertures each having a length associated therewith, wherein each aperture is associated with one of the plurality of mesas,

wherein the length of each aperture in the pixel is selected to be resonant to one of a plurality of different IR wavelengths.

10. The method of claim 9, further comprising:

forming a via in the oxide layer; and

filling the via with a conductive material so as to provide ohmic contact between the metallic surface and a common ground layer.

11. The method of claim 9, wherein the absorber material comprises mercad telluride.

12. The method of claim 11, further comprising forming an intermediate layer of cadmium telluride over the substrate before forming the mercad telluride.

13. The method of claim 9, wherein the IR absorber material comprises Hg₍₁₋

x)Cd_xTe, where x is about 0.21.

14. The method of claim 9, wherein forming the mesas comprises dry etching the absorber material to L³, where L is approximately 2-3 μ

m.

15. The method of claim 9, wherein forming the mesas comprises forming more than two mesas in the pixel.

16. The method of claim 9, wherein said forming the IR absorber material comprises epitaxially growing the IR absorber material on a layer of Hg₍₁₋

x)Cd_xTe;

n⁺.