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JUNCTIONLESS METAL-OXIDE-SEMICONDUCTOR TRANSISTOR

  • US 20100276662A1
  • Filed: 04/02/2010
  • Published: 11/04/2010
  • Est. Priority Date: 09/05/2008
  • Status: Active Grant
First Claim
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1. A transistor device comprising:

  • a semiconductor material comprising first, second, and third portions, wherein the second portion is located between the first and third portions and wherein the first, second, and third portions are doped with dopants of the same polarity and the same concentration; and

    an electrode connected to the second portion, wherein a current flows between the first and third portions when a voltage is applied to the electrode.

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