JUNCTIONLESS METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
First Claim
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1. A transistor device comprising:
- a semiconductor material comprising first, second, and third portions, wherein the second portion is located between the first and third portions and wherein the first, second, and third portions are doped with dopants of the same polarity and the same concentration; and
an electrode connected to the second portion, wherein a current flows between the first and third portions when a voltage is applied to the electrode.
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Abstract
A junctionless metal-oxide-semiconductor transistor is described. In one aspect, a transistor device comprises a semiconductor material. The semiconductor material comprises first, second, and third portions. The second portion is located between the first and third portions. The first, second, and third portions are doped with dopants of the same polarity and the same concentration. The transistor device further comprises an electrode connected to the second portion. A current flows between the first and third portions when a voltage is applied to the electrode.
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Citations
43 Claims
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1. A transistor device comprising:
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a semiconductor material comprising first, second, and third portions, wherein the second portion is located between the first and third portions and wherein the first, second, and third portions are doped with dopants of the same polarity and the same concentration; and an electrode connected to the second portion, wherein a current flows between the first and third portions when a voltage is applied to the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A transistor device comprising:
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a semiconductor material comprising first, second, and third portions, wherein the second portion is located between the first and third portions and wherein the first, second, and third portions are doped with dopants of the same polarity and the same concentration; and an electrode connected to the second portion, wherein a current flows between the first and third portions when a voltage is applied to the electrode, wherein the concentration of the dopants is approximately 1×
1019 atom/cm3 or greater. - View Dependent Claims (20, 21, 22, 23)
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24. A method of manufacturing a transistor device, the method comprising:
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doping first, second, and third portions of a semiconductor material with dopants of the same polarity and the same concentration, wherein the second portion is located between the first and third portions; and connecting an electrode to the second portion, wherein a current flows between the first and third portions when a voltage is applied to the electrode. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A transistor device comprising:
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first, second, and third means for conducting a current, wherein the second means is located between the first and third means, and wherein the first, second, and third means are doped with dopants of the same polarity and the same concentration; and means for applying a voltage to the second means, wherein a current flows between the first and third means when a voltage is applied. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification