Oxide semiconductor and thin film transistor including the same
First Claim
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1. An oxide semiconductor comprising hafnium (Hf), indium (In), and zinc (Zn), wherein a composition ratio of indium (In) is from about 20 at. % to about 46 at. % of the total content of Hf, In, and Zn.
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Abstract
Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
29 Citations
16 Claims
- 1. An oxide semiconductor comprising hafnium (Hf), indium (In), and zinc (Zn), wherein a composition ratio of indium (In) is from about 20 at. % to about 46 at. % of the total content of Hf, In, and Zn.
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9. An oxide thin film transistor (TFT) comprising:
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a gate; a channel formed in a position corresponding to the gate and comprises hafnium (Hf), indium (In), and zinc (Zn), wherein a composition ratio of In is from about 20 at. % to about 46 at .% with respect to the total content of Hf, In, and Zn; a gate insulator between the gate and the channel; and a source and a drain configured to contact respective ends of the channel and the gate insulator. - View Dependent Claims (10, 12, 13, 14, 15, 16)
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Specification