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OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

  • US 20100276688A1
  • Filed: 12/19/2008
  • Published: 11/04/2010
  • Est. Priority Date: 12/25/2007
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising a semiconductor layer comprising a composite oxide which comprises In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in the following atomic ratios (1) to (3):


  • In/(In+Zn)=0.2 to 0.8 



    (1)
    In/(In+X)=0.29 to 0.99 



    (2)
    Zn/(X+Zn)=0.29 to 0.99 



    (3).

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