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VERTICAL TRANSISTORS

  • US 20100276749A1
  • Filed: 07/14/2010
  • Published: 11/04/2010
  • Est. Priority Date: 09/01/2004
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a semiconductor substrate;

    a source region formed in a first pillar;

    a drain region formed in a second pillar, the first and second pillars each having an inner wall, first and second outer sidewalls and an end wall, wherein the inner walls of the first and second pillars face each other, the end walls of the first and second pillars face away from each other, and the outer sidewalls connect the inner and end walls of each of the first and second pillars;

    a dielectric material filling a region between the inner walls of the first and second pillars;

    a first gate line facing the first outer sidewalls of the first and second pillars; and

    a channel region gatedly connecting the source region in the first pillar to the drain region in the second pillar.

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