SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

• US 20100276765A1
• Filed: 12/12/2008
• Published: 11/04/2010
• Est. Priority Date: 12/25/2007
• Status: Active Grant

• Current Assignee: Fujikura Limited
• Original Assignee: Fujikura Limited
• Inventors: Yamamoto, Satoshi, Hashimoto, Hirokazu
• Granted Patent: US 8,211,751 B2
• Time in Patent Office: Days
• US Class Current: 257/415
• CPC Class Codes: B81C 1/00317 Packaging optical devices
• CPC Class Codes: B81C 2201/0104 Chemical-mechanical polishing [CMP]
• CPC Class Codes: B81C 2201/0108 Sacrificial polymer, ashing of organics
• CPC Class Codes: B81C 2201/0125 Blanket removal, e.g. polishing
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of manufacturing a semiconductor device includes: a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate; a thinning step of thinning at least one of the first and second substrates; and a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates. According to the present invention, it is possible to prevent irregularities or cracks caused by the presence or absence of the cavity and more regularly thin the substrate. In addition, it is possible to manufacture a semiconductor device capable of contributing to the miniaturization of devices and electronic equipment having the devices, using a more convenient process.

Claims

1. A method of manufacturing a semiconductor device comprising:

a bonding step of bonding a first substrate with optical transparency and a second substrate having a surface on which a functional element is provided to each other such that the functional element faces the first substrate;

a thinning step of thinning at least one of the first and second substrates; and

a through-hole forming step of forming a cavity and a through-hole communicated with the cavity in at least part of a bonding portion between the first and second substrates.

2. The method according to claim 1, wherein:

in the bonding step, the first and second substrates are bonded to each other by providing photosensitive resin in the bonding portion and curing the photosensitive resin by exposure, and

in the through-hole forming step, the cavity is formed by removing a predetermined portion of the photosensitive resin after the curing.

3. The method according to claim 1, wherein

in the through-hole forming step, the cavity is formed by irradiating the first substrate at a predetermined position with laser light to form a reforming portion, and removing the reforming portion.

4. The method according to claim 1, further comprising

a sealing portion forming step of forming a sealing portion which air-tightly seals the cavity, after the through-hole forming step.

5. A semiconductor device comprising:

a first substrate with optical transparency;

a second substrate which has a surface on which a functional element is provided and which is bonded to the first substrate such that the functional element faces the first substrate;

a cavity arranged in a portion corresponding to the functional element at a bonding portion between the first and second substrates; and

a through-hole communicated with the cavity.

6. The semiconductor device according to claim 5, wherein the functional element is an imaging element.

7. The semiconductor device according to claim 5, wherein the functional element is a pressure sensor element.