Wafer Backside Structures Having Copper Pillars
First Claim
Patent Images
1. An integrated circuit structure comprising:
- a semiconductor substrate comprising a front side and a backside;
a conductive via penetrating the semiconductor substrate, the conductive via comprising a back end extending to the backside of the semiconductor substrate;
a redistribution line (RDL) on the backside of the semiconductor substrate and electrically connected to the back end of the conductive via;
a passivation layer over the RDL, with an opening in the passivation layer, wherein a portion of the RDL is exposed through the opening; and
a copper pillar having a portion in the opening and electrically connected to the RDL.
1 Assignment
0 Petitions
Accused Products
Abstract
An integrated circuit structure includes a semiconductor substrate having a front side and a backside, and a conductive via penetrating the semiconductor substrate. The conductive via includes a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is on the backside of the semiconductor substrate and electrically connected to the back end of the conductive via. A passivation layer is over the RDL, with an opening in the passivation layer, wherein a portion of the RDL is exposed through the opening. A copper pillar has a portion in the opening and electrically connected to the RDL.
-
Citations
19 Claims
-
1. An integrated circuit structure comprising:
-
a semiconductor substrate comprising a front side and a backside; a conductive via penetrating the semiconductor substrate, the conductive via comprising a back end extending to the backside of the semiconductor substrate; a redistribution line (RDL) on the backside of the semiconductor substrate and electrically connected to the back end of the conductive via; a passivation layer over the RDL, with an opening in the passivation layer, wherein a portion of the RDL is exposed through the opening; and a copper pillar having a portion in the opening and electrically connected to the RDL. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An integrated circuit structure comprising:
-
a semiconductor substrate comprising a front side and a backside; a conductive via extending from the backside of the semiconductor substrate into the semiconductor substrate, wherein a back end of the conductive via is exposed through the backside of the semiconductor substrate; a redistribution line (RDL) over the backside of the semiconductor substrate and connected to the back end of the conductive via, the RDL comprising; an RDL strip contacting the conductive via; and an RDL pad having a greater width than the RDL strip, wherein the RDL pad joins the RDL strip; a passivation layer over the RDL; an opening in the passivation layer, wherein a middle portion of the RDL pad is exposed through the opening, and wherein edge portions of the RDL pad are covered by the passivation layer; and a copper pillar in the opening and contacting the middle portion of the RDL. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. A method of forming an integrated circuit structure, the method comprising:
-
providing a semiconductor substrate comprising a front side and a backside; providing a conductive via penetrating the semiconductor substrate, the conductive via comprising a back end extending to the backside of the semiconductor substrate; forming a redistribution line (RDL) on the backside of the semiconductor substrate and connected to the back end of the conductive via; forming a passivation layer over the RDL; forming an opening in the passivation layer, with a portion of the RDL being exposed through the opening; and forming a copper pillar having a portion in the opening, wherein the copper pillar is electrically connected to, and over, the RDL. - View Dependent Claims (15, 16, 17, 18, 19)
-
Specification