SILICON BIOSENSOR AND MANUFACTURING METHOD THEREOF

• US 20100278694A1
• Filed: 06/20/2008
• Published: 11/04/2010
• Est. Priority Date: 12/10/2007
• Status: Abandoned Application

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Wan Joong, Park, Seon Hee, Huh, Chul, Kim, Kyung Hyun, Sung, Gun Yong, Ko, Hyun Sung, Hong, Jong Cheol
• Application Number:
  US12/746,247
• Publication Number:
  US 20100278694A1
• Time in Patent Office: Days
• US Class Current: 422/69
• CPC Class Codes: G01N 33/54366 Apparatus specially adapted for solid-phase testing

Abstract

A silicon biosensor and a manufacturing method thereof is provided, the silicon biosensor includes: a light source performing self emission a light detector generating a photoelectric current corresponding to an amount of incident light an optical fiber transmitting the light from the light source to the light detector and a micro fluidic channel adjusting an optical transmission rate of the optical fiber according to an antibody-antigen reaction when the antibody-antigen reaction occurs. The silicon biosensor can be easily integrated or bonded with a silicon electronic device, so that it is possible to manufacture the biosensor with a low price, under mass production.

Claims

1. A silicon biosensor comprising:

a light source performing self emission;

a light detector generating a photoelectric current corresponding to an amount of incident light;

an optical fiber transmitting the light from the light source to the light detector; and

a micro fluidic channel adjusting an optical transmission rate of the optical fiber according to an antibody-antigen reaction when the antibody-antigen reaction occurs.

2. The silicon biosensor of claim 1, wherein the light source comprises:

a hole-doped layer formed on an upper surface of a silicon substrate;

a light-emitting layer formed on an upper surface of the hole-doped layer; and

an electron-doped layer formed on an upper surface of the light-emitting layer.

3. The silicon biosensor of claim 2,

wherein the light-emitting layer is made of a silicon nitride (SiN), and

wherein the electron-doped layer and the hole-doped layer are constructed with silicon carbide-based films which have complementary polarities.

4. The silicon biosensor of claim 2, wherein the light detector comprises:

a hole-doped layer formed on an upper surface of a silicon substrate;

a thin film layer formed on an upper surface of the hole-doped layer; and

an electron-doped layer formed on an upper surface of the thin film layer.

5. The silicon biosensor of claim 4,

wherein the thin film layer is made of a silicon nitride (SiN), and

wherein the electron-doped layer and the hole-doped layer are constructed with silicon carbide-based films which have complementary polarities.

6. The silicon biosensor of claim 1, wherein the silicon biosensor further comprises an insulator formed between the light source and the light detector to spatially separate the light source from the light detector.

7. The silicon biosensor of claim 6, wherein the optical fiber is formed on an upper surface of the insulator and connects the light source to the light detector.

8. The silicon biosensor of claim 7, wherein the optical fiber is formed by using the silicon nitride-based film.

9. The silicon biosensor of claim 6, wherein the micro fluidic channel is formed on an upper surface of the optical fiber.

10. The silicon biosensor of claim 9, wherein the micro fluidic channel is made of PDMS (polydimethylsiloxane).

11. A method of manufacturing a silicon biosensor, the method comprising:

sequentially depositing a first silicon film, a silicon nanocrystal, and a second silicon film on an upper surface of a silicon substrate;

separating the first silicon film, the silicon nanocrystal, and the second silicon film into two regions by using an insulator

forming a light source with the first silicon film, the silicon nanocrystal, and the second silicon film layered on one side of the insulator, and forming a light detector with the first silicon film, the silicon nanocrystal, and the second silicon film on the remaining side of the insulator

forming an optical fiber on an upper surface of the insulator and

forming a micro fluidic channel on an upper surface of the optical fiber.

12. The method of claim 11,

wherein the silicon nanocrystal is made of a silicon nitride (SiN), and

wherein the first and the second silicon film are constructed with silicon carbide-based films which have complementary polarities.

13. The method of claim 11, wherein the optical fiber is formed by using a silicon nitride-based film.

14. The method of claim 11, wherein the micro fluidic channel is made of PDMS.