CONTROLLING EDGE EMISSION IN PACKAGE-FREE LED DIE
First Claim
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1. A method for wafer scale fabrication of light emitting diode (LED) structures, comprising:
- singulating LED dies in a device wafer;
separating the LED dies to create spaces between the LED dies;
applying a reflective coating in the spaces between the LED dies; and
breaking or separating the reflective coating in the spaces between the LED dies, wherein portions of the reflective coating remain on the lateral sides of the LED dies to control edge emission.
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Abstract
Light emitting diode (LED) structures are fabricated in wafer scale by mounting singulated LED dies on a carrier wafer or a stretch film, separating the LED dies to create spaces between the LED dies, applying a reflective coating over the LED dies and in the spaces between the LED dies, and separating or breaking the reflective coating in the spaces between the LED dies such that some reflective coating remains on the lateral sides of the LED die. Portions of the reflective coating on the lateral sides of the LED dies may help to control edge emission.
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Citations
14 Claims
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1. A method for wafer scale fabrication of light emitting diode (LED) structures, comprising:
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singulating LED dies in a device wafer; separating the LED dies to create spaces between the LED dies; applying a reflective coating in the spaces between the LED dies; and breaking or separating the reflective coating in the spaces between the LED dies, wherein portions of the reflective coating remain on the lateral sides of the LED dies to control edge emission. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification