METHOD FOR FABRICATING PATTERNS ON A WAFER THROUGH AN EXPOSURE PROCESS
First Claim
1. A method for forming patterns on a wafer, comprising:
- forming a fence having a sloped face in an edge portion of the wafer, wherein the sloped face is directed to an inside of the wafer;
forming a first photoresist layer which extends to cover the fence on the wafer;
forming first photoresist patterns by performing a first exposure and development on the first photoresist layer; and
performing an etch process using the first photoresist patterns and the fence as an etch mask.
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Accused Products
Abstract
A method for forming patterns on a wafer includes forming a fence having a sloped face in an edge portion of the wafer. The sloped face is direct to an inside of the wafer. A first photoresist layer is formed which extends to cover the fence on the wafer. First photoresist patterns are formed by performing a first exposure and development on the first photoresist layer. An etch process is performed using the first photoresist patterns and the fence as an etch mask. The fence is formed by selectively exposing a negative resist using a light shielding blade, and at this time, the first photoresist layer is formed including a positive resist.
14 Citations
20 Claims
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1. A method for forming patterns on a wafer, comprising:
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forming a fence having a sloped face in an edge portion of the wafer, wherein the sloped face is directed to an inside of the wafer; forming a first photoresist layer which extends to cover the fence on the wafer; forming first photoresist patterns by performing a first exposure and development on the first photoresist layer; and performing an etch process using the first photoresist patterns and the fence as an etch mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for forming patterns on a wafer, comprising:
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forming a first photoresist layer on the wafer; providing the wafer below a lens part of an exposure equipment; providing a light shielding blade for opening an edge portion of the wafer above the lens part; forming a fence in an edge portion of the wafer by performing a first exposure which results in a defocus to the first photoresist layer by providing an exposure light through the light shielding blade, wherein the fence comprises a sloped face directed to an inside of the wafer; forming a second photoresist layer on the wafer formed with the fence; forming second photoresist patterns by performing a second exposure and development on the second photoresist layer; and performing an etch process using the second photoresist patterns and the fence. - View Dependent Claims (14, 15, 16)
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17. A method for forming patterns on a wafer, comprising:
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forming a sacrificial layer to provide a pillar shape to a storage node on the wafer; forming a first photoresist layer on the sacrificial layer; providing the wafer below a lens part of an exposure equipment; providing a light shielding blade for opening an edge portion of the wafer above the lens part; forming a fence in an edge portion of the wafer by performing a first exposure which results in a defocus to the first photoresist layer by providing an exposure light through the light shielding blade, wherein the fence comprises a sloped face directed to an inside of the wafer; forming a second photoresist layer on the wafer formed with the fence; forming second photoresist patterns by performing a second exposure and development on the second photoresist layer; forming opening holes passing through the sacrificial layer by performing an etch process using the second photoresist patterns and the fence; and forming storage nodes according to a profile of the opening hole. - View Dependent Claims (18, 19, 20)
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Specification