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METHOD FOR FABRICATING PATTERNS ON A WAFER THROUGH AN EXPOSURE PROCESS

  • US 20100279505A1
  • Filed: 10/20/2009
  • Published: 11/04/2010
  • Est. Priority Date: 04/30/2009
  • Status: Active Grant
First Claim
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1. A method for forming patterns on a wafer, comprising:

  • forming a fence having a sloped face in an edge portion of the wafer, wherein the sloped face is directed to an inside of the wafer;

    forming a first photoresist layer which extends to cover the fence on the wafer;

    forming first photoresist patterns by performing a first exposure and development on the first photoresist layer; and

    performing an etch process using the first photoresist patterns and the fence as an etch mask.

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