Memory Element and Method for Manufacturing the Same, and Semiconductor Device
First Claim
1. A semiconductor device comprising a memory element comprising:
- a first conductive layer;
a second conductive layer; and
a memory layer between the first conductive layer and the second conductive layer,wherein the memory layer comprises nanoparticles each of which is coated with organic thin film,wherein the nanoparticles comprises a conductive material andwherein the organic thin film comprises a surfactant.
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Accused Products
Abstract
The memory element has a structure at least including a first conductive layer, a second conductive layer, and a memory layer disposed between the first conductive layer and the second conductive layer. The memory layer is formed by a droplet discharge method using nanoparticles of a conductive material each of which is coated with an organic thin film. Specifically, a composition in which nanoparticles of a conductive material each of which is coated with an organic thin film are dispersed in a solvent is discharged (ejected) as ink droplets, and the solvent is dried to be vaporized to form the memory layer. Accordingly, a memory element can be formed simply. In addition, efficiency in the use of materials can be improved and yield is also improved, so that the memory element can be provided at low cost.
50 Citations
25 Claims
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1. A semiconductor device comprising a memory element comprising:
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a first conductive layer; a second conductive layer; and a memory layer between the first conductive layer and the second conductive layer, wherein the memory layer comprises nanoparticles each of which is coated with organic thin film, wherein the nanoparticles comprises a conductive material and wherein the organic thin film comprises a surfactant. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising a memory element comprising:
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a first conductive layer; a second conductive layer; and a memory layer between the first conductive layer and the second conductive layer, wherein the memory layer comprises nanoparticles each of which is coated with organic thin film, wherein the nanoparticles comprises a conductive material and wherein the organic thin film comprises a material which forms a coordinate bond with the conductive material. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising a memory element comprising:
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a first conductive layer; a second conductive layer; a memory layer between the first conductive layer and the second conductive layer; and an insulating layer between the first conductive layer and the memory layer, wherein the memory layer comprises nanoparticles each of which is coated with organic thin film, and wherein the nanoparticles comprises a conductive material. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor device comprising a memory element comprising:
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a first conductive layer; a second conductive layer; a memory layer between the first conductive layer and the second conductive layer; and a semiconductor layer between the first conductive layer and the memory layer, wherein the memory layer comprises nanoparticles each of which is coated with organic thin film, and wherein the nanoparticles comprises a conductive material. - View Dependent Claims (17, 18, 19, 20)
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21. A method for manufacturing a memory element, comprising the steps of:
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forming a first conductive layer; forming memory layer, comprising the steps of; discharging a composition comprising nanoparticles of a conductive material each of which is coated with organic thin film, onto the first conductive layer; and drying the discharged composition, and forming a second conductive layer over the memory layer. - View Dependent Claims (22, 23, 24, 25)
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Specification