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NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATURE

  • US 20100283053A1
  • Filed: 05/11/2009
  • Published: 11/11/2010
  • Est. Priority Date: 05/11/2009
  • Status: Abandoned Application
First Claim
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1. A method of forming a monolithic three-dimensional memory array, the method comprising:

  • forming a first memory level that includes a plurality of memory cells, each memory cell comprising a plurality of conductors comprising aluminum or copper; and

    forming a silicon diode in each memory cell using a hot wire chemical vapor deposition technique, wherein the silicon diode is formed at temperatures compatible with the conductors.

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