OPTOELECTRONIC SYSTEM

• US 20100283062A1
• Filed: 07/21/2010
• Published: 11/11/2010
• Est. Priority Date: 07/04/2003
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: LEE, Tsung-Xian, LIU, Hsin-Mao, HAN, Cheng-Nan, HONG, Steve Meng-Yuan, HSIEH, Min-Hsun
• Granted Patent: US 8,999,736 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/4918 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0756 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin

Abstract

An embodiment of the invention discloses an optoelectronics system and a method of making the same. The method includes steps of providing a temporary substrate; providing un-packaged optoelectronic elements on the temporary substrate; forming a trench between two of the un-packaged optoelectronic elements; providing an adhesive material to fill the trench and cover the optoelectronic elements; providing a permanent substrate on the adhesive material; and removing the temporary substrate.

Claims

1. A method of making an optoelectronic system comprising:

providing a temporary substrate;

providing un-packaged optoelectronic elements on the temporary substrate;

forming a trench between any two of the un-packaged optoelectronic elements;

providing an adhesive material to fill the trench and cover the optoelectronic elements;

providing a permanent substrate on the adhesive material; and

removing the temporary substrate

2. The method of claim 1 further comprising:

providing a first connecting layer on the temporary substrate to connect the un-packaged optoelectronic elements.

3. The method of claim 1, wherein the un-packaged optoelectronic elements comprises a light-emitting diode.

4. The method of claim 1 further comprising:

providing a phosphor layer on the adhesive material.

5. The method of claim 1 further comprising:

providing a fan-out electrode on an electrode of the un-packaged optoelectronic elements.

6. The method of claim 1 further comprising:

providing a fan-out electrode electrically connected to the un-packaged optoelectronic element and extending outside a boundary of at least one of the un-packaged optoelectronic elements.

7. The method of claim 1 further comprising:

providing a second connecting layer between the permanent substrate and at least one of the un-packaged optoelectronic elements.

8. The method of claim 7, wherein the second connecting layer comprises a channel.

9. The method of claim 1 further comprising:

providing a micro-pyramid between two of the un-packaged optoelectronic elements.

10. An optoelectronic system comprising:

a system unit having an anode and a cathode;

a material having a spatial boundary outside the system unit and exposing the anode and the cathode; and

an electrical connection, electrically connected to at least one of the anode and the cathode, being supported by the material and approaching an edge of the spatial boundary.