LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER
First Claim
1. A semiconductor stack capable of being diced into multiple light emitting diodes (LEDs) comprising:
- a light emitting diode (LED) wafer comprising a first stack of LED semiconductor layers disposed on an LED substrate, at least part of the LED wafer comprising a first textured surface;
a multilayer semiconductor wavelength converter configured to be effective at converting the wavelength of light generated in the LED layers; and
a bonding layer attaching the LED wafer to the wavelength converter.
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Accused Products
Abstract
A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.
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Citations
72 Claims
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1. A semiconductor stack capable of being diced into multiple light emitting diodes (LEDs) comprising:
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a light emitting diode (LED) wafer comprising a first stack of LED semiconductor layers disposed on an LED substrate, at least part of the LED wafer comprising a first textured surface; a multilayer semiconductor wavelength converter configured to be effective at converting the wavelength of light generated in the LED layers; and a bonding layer attaching the LED wafer to the wavelength converter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of making wavelength converted, light emitting diodes, comprising:
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providing a light emitting diode (LED) wafer comprising a set of LED semiconductor layers disposed on a substrate, the LED wafer having a textured surface; providing a multilayer semiconductor wavelength converter wafer configured to be effective at converting wavelength of light generated within the LED layers; bonding the converter wafer to the LED wafer to produce an LED/converter wafer using a bonding layer disposed between the LED wafer and the converter wafer; and separating individual converted LED dies from the LED/converter wafer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A wavelength converted light emitting diode (LED), comprising:
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an LED comprising LED semiconductor layers on an LED substrate, the LED comprising a first surface on a side of the LED facing away from the LED substrate; and a multilayered semiconductor wavelength converter attached to the first surface of the LED by a bonding layer, the wavelength converter having a first side facing away from the LED and a second side facing the LED, at least part of one of the first side and the second side of the wavelength converter comprising a first textured surface. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A wavelength converted light emitting diode (LED), comprising:
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an LED comprising a stack of LED semiconductor layers on an LED substrate, at least part of a first side of the stack of LED semiconductor layers facing the LED substrate comprising a first textured surface; and a multilayer semiconductor wavelength converter attached by a bonding layer to a side of the LED facing away from the LED substrate. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42)
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43. A wavelength converted light emitting diode (LED) device, comprising:
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an LED comprising a stack of LED semiconductor layers on an LED substrate, at least part of a first side of the LED substrate facing away from the stack of LED semiconductor layers comprising a first textured surface; and a multilayer semiconductor wavelength converter attached by a bonding layer to a side of the LED facing away from the LED substrate. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. A light emitting diode (LED) device, comprising:
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an LED comprising a stack of LED semiconductor layers on an LED substrate, at least part of an upper side of the stack of LED semiconductor layers stack facing away from the LED substrate comprising a textured surface; a multilayer wavelength converter formed of a II-VI semiconductor material and attached to the LED semiconductor layer stack; and a light blocking feature provided at the edge of LED semiconductor layers to reduce edge-leakage of light generated within the LED semiconductor layers. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62)
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63. A wavelength converted light emitting diode (LED) device, comprising:
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an LED comprising a stack of LED semiconductor layers on an LED substrate, the LED comprising a first textured surface; and a multilayer semiconductor wavelength converter attached by a bonding layer to the LED. - View Dependent Claims (64, 65, 66, 67, 68)
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69. A wavelength converter device for a light emitting diode (LED), comprising:
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a multilayer semiconductor wavelength converter element; a bonding layer disposed on one side of the wavelength converter element; and a removable protective layer over the bonding layer. - View Dependent Claims (70, 71, 72)
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Specification