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Structure and Method to Form EDRAM on SOI Substrate

  • US 20100283093A1
  • Filed: 05/07/2009
  • Published: 11/11/2010
  • Est. Priority Date: 05/07/2009
  • Status: Active Grant
First Claim
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1. A memory device comprising:

  • at least one trench capacitor located in a semiconductor substrate, the at least one trench capacitor comprising an outer electrode provided by a doped portion of the semiconductor substrate, an inner electrode provided by a conductive fill material, and a node dielectric layer located between the outer electrode and the inner electrode;

    at least one semiconductor device positioned centrally over the at least one trench capacitor, wherein the at least one semiconductor device comprises a source region, a drain region, and a gate structure, wherein the at least one semiconductor device is formed on a semiconductor layer that is separated from the semiconductor substrate by a dielectric layer;

    a first contact extending from an upper surface of the semiconductor layer into electrical contact with the semiconductor substrate; and

    a second contact from the drain region of the semiconductor device into electrical contact with the conductive fill material of the at least one trench capacitor.

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