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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100283105A1
  • Filed: 07/21/2010
  • Published: 11/11/2010
  • Est. Priority Date: 03/26/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer formed over an insulating surface;

    a first insulating layer formed over the semiconductor layer;

    a gate electrode formed over the first insulating layer;

    a second insulating layer formed over the gate electrode; and

    a conductive layer formed over the second insulating layer,wherein the conductive layer is connected to a side surface of the semiconductor layer.

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