SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a semiconductor layer formed over an insulating surface;
a first insulating layer formed over the semiconductor layer;
a gate electrode formed over the first insulating layer;
a second insulating layer formed over the gate electrode; and
a conductive layer formed over the second insulating layer,wherein the conductive layer is connected to a side surface of the semiconductor layer.
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Accused Products
Abstract
A technique of manufacturing a semiconductor device in which etching in formation of a contact hole can be easily controlled is proposed. A semiconductor device includes at least a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer connected to the semiconductor layer via an opening which is formed at least in the semiconductor layer and the second insulating layer and partially exposes the insulating surface. The conductive layer is electrically connected to the semiconductor layer at the side surface of the opening which is formed in the semiconductor layer.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer, wherein the conductive layer is connected to a side surface of the semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode; and a conductive layer formed over the second insulating layer, wherein the conductive layer is connected to a side surface of the semiconductor layer and a top surface of the semiconductor layer. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor layer formed over an insulating surface; a first insulating layer formed over the semiconductor layer; a gate electrode formed over the first insulating layer; a second insulating layer formed over the gate electrode, the second insulating layer having a contact hole; and a conductive layer formed over the second insulating layer, wherein the conductive layer is connected to a side surface of the semiconductor layer and a top surface of the semiconductor layer via the contact hole. - View Dependent Claims (12, 13, 14, 15)
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Specification