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INTEGRATING A FIRST CONTACT STRUCTURE IN A GATE LAST PROCESS

  • US 20100285658A1
  • Filed: 07/20/2010
  • Published: 11/11/2010
  • Est. Priority Date: 08/26/2008
  • Status: Active Grant
First Claim
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1. A method for fabricating a semiconductor device, the method comprising:

  • providing a semiconductor substrate;

    forming a transistor having a dummy gate structure;

    forming a first dielectric layer over the substrate including the transistor;

    forming a first contact feature in the first dielectric layer;

    removing a portion of the first dielectric layer to expose a portion of the dummy gate structure;

    removing the dummy gate structure and replacing it with a metal gate;

    forming a second dielectric layer over the first dielectric layer; and

    forming a second contact feature and a metal barrier in the second dielectric layer, the second contact feature being coupled to the first contact feature via the metal barrier.

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