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GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

  • US 20100288999A1
  • Filed: 08/28/2008
  • Published: 11/18/2010
  • Est. Priority Date: 10/19/2007
  • Status: Active Grant
First Claim
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1. A Group III nitride semiconductor light-emitting device comprising:

  • a substrate; and

    a light-emitting layer having a multiple quantum well structure comprising a barrier layer, which is provided on a surface of the substrate and formed of a Group III nitride semiconductor, and a well layer formed of an indium-containing Group III nitride semiconductor,wherein the light-emitting layer having the multiple quantum well structure is constituted by stacking a plurality of multilayer portions which comprise one unit multilayer portion comprising the well layer and the barrier layer or two or more stacked unit multilayer portions,when the multilayer portion comprises two or more unit multilayer portions, the respective well layers or the respective barrier layers have the same thickness and composition, andin the respective multilayer portions, the barrier layers of the unit multilayer portions are different in thickness.

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