THIN FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY PANEL COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE
First Claim
1. A thin film transistor array substrate, comprising:
- a plurality of pixel electrodes arranged in a matrix pattern;
a plurality of source lines arranged to extend in parallel to one another and each arranged between the pixel electrodes;
a plurality of gate lines arranged to extend in parallel to one another and in a direction crossing the source lines; and
a plurality of thin film transistors respectively provided per each of intersections of the gate lines and the source lines, whereinthe thin film transistors each include;
a gate electrode connected to corresponding one of the gate lines;
a first semiconductor portion formed to be island-shaped and to overlap the gate electrode having a gate insulating film interposed therebetween;
a source electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the source lines, a drain electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the pixel electrodes;
a second semiconductor portion formed to be island-shaped between the gate insulating film and the source electrode so as to overlap the gate electrode, and a conductive portion arranged to overlap the gate electrode having the gate insulating film and the second semiconductor portion interposed therebetween, and whereinthe thin film transistors are each configured such that, when a short-circuit portion is formed by a short-circuit established at the source electrode and the drain electrode, the source line connected to the source electrode and the pixel electrode connected to the drain electrode are brought into conduction by a switching element including the short-circuit portion, the second semiconductor portion and the conductive portion.
1 Assignment
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Accused Products
Abstract
A TFT (5) includes: a gate electrode (12a); a first semiconductor portion (14a) that overlaps the gate electrode (12a) having the gate insulating film (13) interposed therebetween; a source electrode (15a) and a drain electrode (15b) that overlap the gate electrode (12a) having the gate insulating film (13) and the first semiconductor portion (14a) interposed therebetween; a second semiconductor portion (14b) that overlaps the gate electrode (12a) between the gate insulating film (13) and the source electrode (15a); and a conductive portion (15c) that overlaps the gate electrode (12a) having the gate insulating film (13) and the second semiconductor portion (14b) interposed therebetween. The TFT (5) brings the source line (15a) and the pixel electrode (17) into conduction by a switching element that includes short-circuit portion at the source electrode (15a) and the drain electrode (15b), the second semiconductor portion (14b) and the conductive portion (15c).
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Citations
12 Claims
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1. A thin film transistor array substrate, comprising:
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a plurality of pixel electrodes arranged in a matrix pattern; a plurality of source lines arranged to extend in parallel to one another and each arranged between the pixel electrodes; a plurality of gate lines arranged to extend in parallel to one another and in a direction crossing the source lines; and a plurality of thin film transistors respectively provided per each of intersections of the gate lines and the source lines, wherein the thin film transistors each include;
a gate electrode connected to corresponding one of the gate lines;
a first semiconductor portion formed to be island-shaped and to overlap the gate electrode having a gate insulating film interposed therebetween;
a source electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the source lines, a drain electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the pixel electrodes;
a second semiconductor portion formed to be island-shaped between the gate insulating film and the source electrode so as to overlap the gate electrode, and a conductive portion arranged to overlap the gate electrode having the gate insulating film and the second semiconductor portion interposed therebetween, and whereinthe thin film transistors are each configured such that, when a short-circuit portion is formed by a short-circuit established at the source electrode and the drain electrode, the source line connected to the source electrode and the pixel electrode connected to the drain electrode are brought into conduction by a switching element including the short-circuit portion, the second semiconductor portion and the conductive portion. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a thin film transistor array substrate, the thin film transistor array substrate including:
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a plurality of pixel electrodes arranged in a matrix pattern; a plurality of source lines arranged to extend in parallel to one another and each arranged between the pixel electrodes; a plurality of gate lines arranged to extend in parallel to one another and in a direction crossing the source lines; and a plurality of thin film transistors respectively provided per each of intersections of the gate lines and the source lines, wherein the thin film transistors each include;
a gate electrode connected to corresponding one of the gate lines;
a first semiconductor portion formed to be island-shaped and to overlap the gate electrode having a gate insulating film interposed therebetween;
a source electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the source lines;
a drain electrode arranged to overlap the gate electrode having the gate insulating film and the first semiconductor portion interposed therebetween and connected to corresponding one of the pixel electrodes;
a second semiconductor portion formed to be island-shaped between the gate insulating film and the source electrode so as to overlap the gate electrode; and
a conductive portion arranged to overlap the gate electrode having the gate insulating film and the second semiconductor portion interposed therebetween,the method comprising; an inspecting step of detecting, out of the plurality of thin film transistors, a thin film transistor in which a short-circuit portion is formed by a short-circuit established at the source electrode and the drain electrode; and a repairing step being carried out for the thin film transistor upon detection of the short-circuit portion in the inspecting step, by bringing the source line connected to the source electrode and the pixel electrode connected to the drain electrode into conduction by a switching element including the short-circuit portion, the second semiconductor portion and the conductive portion. - View Dependent Claims (9, 10, 11, 12)
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Specification