HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) THROUGH MULTIPLE EXTRACTORS
First Claim
1. An optoelectronic device, comprising:
- (a) a substrate;
(b) an active layer comprising light emitting species;
(c) a patterned mesa formed on the active layer; and
(d) an optical element grown or bonded on a top surface of the patterned mesa.
1 Assignment
0 Petitions
Accused Products
Abstract
An (Al,In,Ga)N and ZnO direct wafer bonded light emitting diode (LED), combined with a second light extractor acting as an additional light extraction method. This second light extraction method aims at extracting the light which has not been extracted by the ZnO structure, and more specifically the light which is trapped in the (Al,In,Ga)N layer. This second method is suited for light extraction from thin films, using surface patterning or texturing, or a photonic crystal acting as a diffraction grating. The combination of both the ZnO structure and the second light extraction method enables most of the emitted light from the LED to be extracted. In a more general extension of the present invention, the ZnO structure can be replaced by another material in order to achieve additional light extraction. In another extension, the (Al,In,Ga)N layer can be replaced by structures comprising other materials compositions, in order to achieve additional light extraction.
-
Citations
25 Claims
-
1. An optoelectronic device, comprising:
-
(a) a substrate; (b) an active layer comprising light emitting species; (c) a patterned mesa formed on the active layer; and (d) an optical element grown or bonded on a top surface of the patterned mesa. - View Dependent Claims (2, 3, 4)
-
-
5. An optoelectronic device, comprising:
-
(a) one or more (Al,Ga,In)N layers including light emitting species; (b) a first light extractor, comprising a shaped optical element, adjacent the (Al,Ga,In)N layers, for extracting at least a portion of the light emitted from the (Al,Ga,In)N layers; and (c) a second light extractor, in proximity to the (Al,Ga,In)N layers and the first light extractor, for extracting additional light from the (Al,Ga,In)N layers that has not been extracted by the first light extractor. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A method of fabricating an optoelectronic device, comprising:
-
(a) providing a substrate; (b) forming an active layer including light emitting species on the substrate; (c) forming a patterned mesa formed on the active layer; and (d) growing or bonding an optical element on a top surface of the patterned mesa. - View Dependent Claims (22, 23, 24)
-
-
25. A method of fabricating an optoelectronic device, comprising:
-
(a) forming one or more (Al,Ga,In)N layers including light emitting species; (b) creating a first light extractor, comprising a shaped optical element adjacent the (Al,Ga,In)N layers, for extracting at least a portion of the light emitted from the (Al,Ga,In)N layers; and (c) creating a second light extractor, in proximity to the (Al,Ga,In)N layers and the first light extractor, for extracting additional light from the (Al,Ga,In)N layers that has not been extracted by the first light extractor.
-
Specification