METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
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1. A semiconductor device comprising:
- a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials; and
a second single crystal silicon layer overlying said at least one metal layers;
wherein said second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of said second transistors along an axis in a repeating pattern.
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Abstract
A semiconductor device comprising: a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layers; wherein the second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying said at least one metal layers; wherein said second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands wherein each of a plurality of the bands comprises a portion of said second transistors along an axis in a repeating pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said metal layers comprises copper or aluminum more than other materials; and an overlying second single crystal silicon layer comprising second transistors, second alignment marks, and through vias through said second single crystal silicon layer; wherein said through vias are aligned in a first direction to said first alignment marks and in a second direction to said second alignment marks. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying said at least one metal layer; wherein said second single crystal silicon layer comprises a plurality of second transistors comprising P type transistors and N type transistors; wherein said second transistors are arranged in substantially parallel bands, and wherein each of a plurality of the bands comprises a portion of said second transistors along an axis in a repeating pattern. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification