Magnetic Tunnel Junction Device and Fabrication
First Claim
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1. A method comprising:
- forming a magnetic tunnel junction (MTJ) device on a structure that comprises a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device comprising a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis;
forming and planarizing an insulating layer above the logic cap layer; and
performing a copper damascene process to open a top trench in the insulating layer, to open a top via to the top electrode, to open a logic via to metal in the bottom metal-filled trench, or to open the top via and the logic via, to deposit copper in the top trench and in the top via, in the logic via, or in the top via and in the logic via, and to perform a copper chemical mechanical planarization of the deposited copper.
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Abstract
A magnetic tunnel junction (MTJ) device and fabrication method is disclosed. In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) device on a structure that includes a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device including a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis.
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Citations
42 Claims
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1. A method comprising:
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forming a magnetic tunnel junction (MTJ) device on a structure that comprises a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device comprising a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis; forming and planarizing an insulating layer above the logic cap layer; and performing a copper damascene process to open a top trench in the insulating layer, to open a top via to the top electrode, to open a logic via to metal in the bottom metal-filled trench, or to open the top via and the logic via, to deposit copper in the top trench and in the top via, in the logic via, or in the top via and in the logic via, and to perform a copper chemical mechanical planarization of the deposited copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An apparatus comprising:
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a structure that comprises a bottom cap layer surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising a bottom electrode coupled to the structure, the MTJ device comprising magnetic tunnel junction layers, a top electrode, and a logic cap layer, wherein the MTJ device is offset with respect to the metal pad. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A method comprising:
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forming a first insulating layer above a substrate; forming a bottom cap layer above the first insulating layer; performing a first copper damascene process to open bottom trenches and bottom vias in the first insulating layer, to plate copper in the bottom trenches and in the bottom vias, and to perform a copper chemical mechanical planarization, the copper-filled bottom trenches each having a normal axis; forming a bottom electrode above the bottom cap layer and above the copper-filled bottom trenches; forming magnetic tunnel junction layers above the bottom electrode; forming a hardmask above the magnetic tunnel junction layers; patterning magnetic tunnel junction (MTJ) structures each having an MTJ axis that is offset from the normal axis of an adjacent copper-filled bottom trench; forming a magnetic tunnel junction seal layer above and adjacent to the magnetic tunnel junction structures and above the bottom electrode; forming a second insulating layer above the magnetic tunnel junction seal layer; planarizing the second insulating layer and opening tops of the magnetic tunnel junction structures; forming a top electrode above the planarized second insulating layer and above the tops of the magnetic tunnel junction structures; patterning the top electrode and the bottom electrode; forming a logic cap layer above the bottom cap layer, the logic cap layer adjacent to the magnetic tunnel junction seal layer, adjacent to the second insulating layer, and above the patterned top electrode; forming and planarizing a third insulating layer above the logic cap layer; and performing a second copper damascene process to open at least one of a top via to the patterned top electrode and a logic via to one of the copper-filled bottom trenches and to open a top trench in the third insulating layer, to plate copper in the top trench and in the at least one of the top via and the logic via, and to perform a copper chemical mechanical planarization. - View Dependent Claims (27)
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28. A method comprising:
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a first step for forming a magnetic tunnel junction (MTJ) device on a structure that comprises a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device comprising a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis; a second step for forming and planarizing an insulating layer above the logic cap layer; and a third step for performing a copper damascene process to open a top trench in the insulating layer, to open a top via to the top electrode, to open a logic via to metal in the bottom metal-filled trench, or to open the top via and the logic via, to deposit copper in the top trench and in the top via, in the logic via, or in the top via and in the logic via, and to perform a copper chemical mechanical planarization of the deposited copper.
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29. A method comprising:
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receiving design information representing at least one physical property of a semiconductor device, the semiconductor device comprising; a structure that comprises a bottom cap layer surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising a bottom electrode coupled to the structure, the MTJ device comprising magnetic tunnel junction layers, a top electrode, and a logic cap layer, wherein the MTJ device is offset with respect to the metal pad; transforming the design information to comply with a file format; and generating a data file comprising the transformed design information. - View Dependent Claims (30)
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31. A method comprising:
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receiving a data file comprising design information corresponding to a semiconductor device; and fabricating the semiconductor device according to the design information, wherein the semiconductor device comprises; a structure that comprises a bottom cap layer surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising a bottom electrode coupled to the structure, the MTJ device comprising magnetic tunnel junction layers, a top electrode, and a logic cap layer, wherein the MTJ device is offset with respect to the metal pad. - View Dependent Claims (32)
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33. A method comprising:
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receiving design information comprising physical positioning information of a packaged semiconductor device on a circuit board, the packaged semiconductor device comprising a semiconductor structure comprising; a structure that comprises a bottom cap layer surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising a bottom electrode coupled to the structure, the MTJ device comprising magnetic tunnel junction layers, a top electrode, and a logic cap layer, wherein the MTJ device is offset with respect to the metal pad; and transforming the design information to generate a data file. - View Dependent Claims (34)
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35. A method comprising:
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receiving a data file comprising design information comprising physical positioning information of a packaged semiconductor device on a circuit board; and manufacturing the circuit board configured to receive the packaged semiconductor device according to the design information, wherein the packaged semiconductor device comprises a semiconductor structure comprising; a structure that comprises a bottom cap layer surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising a bottom electrode coupled to the structure, the MTJ device comprising magnetic tunnel junction layers, a top electrode, and a logic cap layer, wherein the MTJ device is offset with respect to the metal pad. - View Dependent Claims (36, 37)
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38. An apparatus comprising:
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means for initiating formation of a magnetic tunnel junction (MTJ) device on a structure that comprises a bottom cap layer and a bottom metal-filled trench having a normal axis, the magnetic tunnel junction device comprising a bottom electrode, magnetic tunnel junction layers, a magnetic tunnel junction seal layer, a top electrode, and a logic cap layer, the magnetic tunnel junction device having an MTJ axis that is offset from the normal axis; means for initiating formation and planarization of an insulating layer above the logic cap layer; and means for initiating a copper damascene process to open a top trench in the insulating layer, to open a top via to the top electrode, to open a logic via to metal in the bottom metal-filled trench, or to open the top via and the logic via, to deposit copper in the top trench and in the top via, in the logic via, or in the top via and in the logic via, and to perform a copper chemical mechanical planarization of the deposited copper. - View Dependent Claims (39)
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40. An apparatus comprising:
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first protective means for protecting against formation of recesses in an insulating layer, the first protective means surrounding a metal pad; and a magnetic tunnel junction (MTJ) device comprising; means for coupling the MTJ device to the metal pad, wherein the MTJ device is offset with respect to the metal pad; magnetic tunnel junction layers; a top electrode; and second protective means for sealing the MTJ device. - View Dependent Claims (41, 42)
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Specification