SOI SUBSTRATE AND METHOD FOR MANUFACTURING SOI SUBSTRATE
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Abstract
An oxide film having a thickness “tox” of not less than 0.2 μm is provided on the bonding surface of a single-crystal silicon substrate. In a method for manufacturing an SOI substrate according to the present invention, a low-temperature process is employed to suppress the occurrence of thermal strain attributable to a difference in the coefficient of thermal expansion between the silicon substrate and a quartz substrate. To this end, the thickness “tox” of the oxide film is set to a large value of not less than 0.2 μm to provide sufficient mechanical strength to the thin film to be separated and, at the same time, to allow strain to be absorbed in and relaxed by the relatively thick oxide film to suppress the occurrence of transfer defects during the step of separation.
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Citations
26 Claims
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1-10. -10. (canceled)
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11. An SOI substrate, comprising an SOI layer comprising a silicon thin film bonded by a silicon dioxide film having a thickness of not less than 0.2 μ
- m, provided on a quartz substrate which is a transparent insulating substrate.
- View Dependent Claims (12, 13)
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14. An SOI substrate, comprising an SOI layer comprising a silicon thin film bonded by a silicon dioxide film onto a quartz substrate, wherein:
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the quartz substrate is a transparent insulating substrate; and the thickness of the silicon dioxide film is equal to or greater than twice the thickness of the SOI layer. - View Dependent Claims (15, 16)
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17. A method for manufacturing an SOI substrate, comprising:
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forming a silicon dioxide film having a thickness of not less than 0.2 μ
m on a surface of a first substrate, which is a single-crystal silicon substrate;forming an ion-implanted layer in the first substrate by implanting hydrogen ions in the first substrate through the silicon dioxide film; applying a surface activation treatment to a bonding surface of at least one of a second substrate, which is a quartz substrate, and the first substrate; bonding together the bonding surface of the first substrate and the bonding surface of said second substrate; and forming an SOI layer on the surface of the second substrate by peeling off a silicon thin film from the first substrate of a bonded substrate provided after a heat treatment. - View Dependent Claims (18, 19, 20, 21)
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22. A method for manufacturing an SOI substrate, comprising:
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forming a silicon dioxide film having a thickness of “
tox”
on a surface of a first substrate, which is a single-crystal silicon substrate;forming an ion-implanted layer having an average ion implantation depth L equal to or less than half the thickness of the silicon dioxide film (2 L≦
tox) in the first substrate by implanting hydrogen ions in the first substrate through the said oxide film;applying a surface activation treatment to a bonding surface of at least one of a second substrate, which is a quartz substrate, and the first substrate; bonding together the bonding surface of the first substrate and the bonding surface of the second substrate; and forming an SOI layer on a surface of the second substrate by peeling off a silicon thin film from the first substrate of a bonded substrate provided after a heat treatment. - View Dependent Claims (23, 24, 25, 26)
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Specification