SEMICONDUCTOR DEVICE

• US 20100289118A1
• Filed: 03/02/2010
• Published: 11/18/2010
• Est. Priority Date: 05/12/2009
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kokubun, Koichi
• Application Number:
  US12/715,594
• Publication Number:
  US 20100289118A1
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device has an inductor. The inductor has a first metal interconnection layer formed in the insulation film to extend in a first direction which is parallel to a substrate face of the semiconductor substrate, and connected electrically at a first end part thereof to the first terminal; a first via interconnection formed in the insulation film to extend in a second direction perpendicular to the substrate face, and connected at a top part thereof to a second end part of the first metal interconnection layer; and a second metal interconnection layer formed in the insulation film to extend in the first direction under the first metal interconnection layer, facing to the first metal interconnection layer, insulated from the first metal interconnection layer by the insulation film, connected at a first end part thereof to a bottom part of the first via interconnection, and connected electrically at a second end part thereof to the second terminal.

Claims

1. A semiconductor device comprising:

an insulation film formed over a semiconductor substrate; and

an inductor formed in the insulation film and connected between a first terminal and a second terminal,

wherein the inductor comprises;

a first metal interconnection layer formed in the insulation film to extend in a first direction which is parallel to a substrate face of the semiconductor substrate, and connected electrically at a first end part thereof to the first terminal;

a first via interconnection formed in the insulation film to extend in a second direction perpendicular to the substrate face, and connected at a top part thereof to a second end part of the first metal interconnection layer; and

a second metal interconnection layer formed in the insulation film to extend in the first direction under the first metal interconnection layer, facing to the first metal interconnection layer, insulated from the first metal interconnection layer by the insulation film, connected at a first end part thereof to a bottom part of the first via interconnection, and connected electrically at a second end part thereof to the second terminal.

2. The device of claim 1, wherein the inductor further comprises:

a second via interconnection formed in the insulation film to extend in the second direction, and connected at a bottom part thereof to the second end part of the second metal interconnection layer; and

a third metal interconnection layer formed in the insulation film to extend in the first direction between the first metal interconnection layer and the second metal interconnection layer, insulated from the first metal interconnection layer and the second metal interconnection layer by the insulation film, having a length which is shorter than that of the second metal interconnection layer, connected at a first end part thereof to a top part of the second via interconnection, and connected electrically at a second end part thereof to the second terminal.

3. The device of claim 1, wherein the inductor further comprises:

a first pull-out interconnection layer formed in the insulation film to extend in a third direction which is parallel to the substrate face and which is perpendicular to the first direction, and electrically connected to the first terminal; and

a second pull-out interconnection layer formed in the insulation film to extend in the third direction, and electrically connected to the second terminal,

the first end of the first metal interconnection layer is electrically connected to the first terminal via the first pull-out interconnection layer, and

the second end part of the second metal interconnection layer is electrically connected to the second terminal via the second pull-out interconnection layer.

4. The device of claim 2, wherein the inductor further comprises:

a first pull-out interconnection layer formed in the insulation film to extend in a third direction which is parallel to the substrate face and which is perpendicular to the first direction, and electrically connected to the first terminal; and

a second pull-out interconnection layer formed in the insulation film to extend in the third direction, and electrically connected to the second terminal,

the first end of the first metal interconnection layer is electrically connected to the first terminal via the first pull-out interconnection layer, and

the second end part of the second metal interconnection layer is electrically connected to the second terminal via the second pull-out interconnection layer.

5. The device of claim 1, wherein the inductor further comprises:

a first relay interconnection layer formed to relay the first via interconnection between the second end part of the first metal interconnection layer and the first end part of the second metal interconnection layer in the insulation film.

6. The device of claim 2, wherein the inductor further comprises:

a first relay interconnection layer formed to relay the first via interconnection between the second end part of the first metal interconnection layer and the first end part of the second metal interconnection layer in the interlayer insulation film.

7. The device of claim 3, wherein the inductor further comprises:

a first relay interconnection layer formed to relay the first via interconnection between the second end part of the first metal interconnection layer and the first end part of the second metal interconnection layer in the insulation film.

8. The device of claim 1, comprising a plurality of the inductors connected in series.

9. The device of claim 2, comprising a plurality of the inductors connected in series.

10. The device of claim 1, wherein the first metal interconnection layer, the first via interconnection, and the second metal interconnection layer are formed on one face perpendicular to the substrate face of the semiconductor substrate.

11. The device of claim 2, wherein the first metal interconnection layer, the first via interconnection, the second metal interconnection layer, the second via interconnection, and the third metal interconnection layer are formed on one face perpendicular to the substrate face of the semiconductor substrate.

12. The device of claim 1, wherein the first metal interconnection layer and the second metal interconnection layer have a substantially same width.

13. The device of claim 1, wherein the first relay interconnection layer and the third metal interconnection layer are formed at a substantially same height from the substrate face of the semiconductor substrate.

14. The device of claim 1, wherein the inductor further comprises:

a second relay interconnection layer formed to relay the second via interconnection between the second end part of the second metal interconnection layer and the first end part of the third metal interconnection layer in the insulation film.

15. The device of claim 1, wherein a plurality of the first via interconnections are formed.

16. The device of claim 2, wherein a plurality of the second via interconnections are formed.

17. The device of claim 1, wherein

a width of the first via interconnection is set substantially equal to that of the first metal interconnection layer and the second metal interconnection layer.

18. The device of claim 1, wherein

a width of the second via interconnection is set substantially equal to that of the second metal interconnection layer and the third metal interconnection layer.

19. The device of claim 1, wherein a length of the second metal interconnection layer is substantially equal to a length of the first metal interconnection layer.