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SEMICONDUCTOR DEVICE

  • US 20100289118A1
  • Filed: 03/02/2010
  • Published: 11/18/2010
  • Est. Priority Date: 05/12/2009
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an insulation film formed over a semiconductor substrate; and

    an inductor formed in the insulation film and connected between a first terminal and a second terminal,wherein the inductor comprises;

    a first metal interconnection layer formed in the insulation film to extend in a first direction which is parallel to a substrate face of the semiconductor substrate, and connected electrically at a first end part thereof to the first terminal;

    a first via interconnection formed in the insulation film to extend in a second direction perpendicular to the substrate face, and connected at a top part thereof to a second end part of the first metal interconnection layer; and

    a second metal interconnection layer formed in the insulation film to extend in the first direction under the first metal interconnection layer, facing to the first metal interconnection layer, insulated from the first metal interconnection layer by the insulation film, connected at a first end part thereof to a bottom part of the first via interconnection, and connected electrically at a second end part thereof to the second terminal.

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