Semiconductor Device and Method of Forming a 3D Inductor from Prefabricated Pillar Frame
First Claim
1. A method of making a semiconductor device, comprising:
- providing a temporary carrier;
mounting a semiconductor die or component over the temporary carrier;
forming an inductor core over the temporary carrier;
mounting a prefabricated pillar frame over the temporary carrier and semiconductor die or component, the prefabricated pillar frame including a plurality of bodies extending from a plate, the bodies being disposed around the inductor core;
depositing an encapsulant through an opening in the plate to cover the semiconductor die or component, bodies, and inductor core;
removing the plate of the prefabricated pillar frame while leaving the bodies to form inductor pillars around the inductor core;
forming a first interconnect structure over a first surface of the encapsulant;
removing the temporary carrier; and
forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor.
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0 Petitions
Accused Products
Abstract
A semiconductor device is made by mounting a semiconductor die over a carrier. A ferromagnetic inductor core is formed over the carrier. A prefabricated pillar frame is formed over the carrier, semiconductor die, and inductor core. An encapsulant is deposited over the semiconductor die and inductor core. A portion of the pillar frame is removed. A remaining portion of the pillar frame provides an interconnect pillar and inductor pillars around the inductor core. A first interconnect structure is formed over a first surface of the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant. The first and second interconnect structures are electrically connected to the inductor pillars to form one or more 3D inductors. In another embodiment, a shielding layer is formed over the semiconductor die. A capacitor or resistor is formed within the first or second interconnect structures.
75 Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a temporary carrier; mounting a semiconductor die or component over the temporary carrier; forming an inductor core over the temporary carrier; mounting a prefabricated pillar frame over the temporary carrier and semiconductor die or component, the prefabricated pillar frame including a plurality of bodies extending from a plate, the bodies being disposed around the inductor core; depositing an encapsulant through an opening in the plate to cover the semiconductor die or component, bodies, and inductor core; removing the plate of the prefabricated pillar frame while leaving the bodies to form inductor pillars around the inductor core; forming a first interconnect structure over a first surface of the encapsulant; removing the temporary carrier; and forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a semiconductor device, comprising:
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providing a carrier; mounting a semiconductor component over the carrier; forming an inductor core over the carrier; mounting a prefabricated pillar frame over the carrier, semiconductor component, and inductor core; depositing an encapsulant over the semiconductor component, prefabricated pillar frame, and inductor core; removing a portion of the prefabricated pillar frame, wherein a remaining portion of the prefabricated pillar frame provides inductor pillars around the inductor core; forming a first interconnect structure over a first surface of the encapsulant; removing the carrier; and forming a second interconnect structure over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form a 3D inductor. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a carrier; mounting a semiconductor component over the carrier; mounting a pillar frame over the carrier and semiconductor component; depositing an encapsulant over the semiconductor component and pillar frame; removing a portion of the pillar frame, wherein a remaining portion of the pillar frame provides inductor pillars; and forming a first interconnect structure over a first surface of the encapsulant, the first interconnect structure being electrically connected to the inductor pillars to form a 3D inductor. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a semiconductor component; an inductor core form in proximity to the semiconductor component; a pillar frame mounted over the carrier and semiconductor component and inductor core; an encapsulant deposited over the semiconductor component, pillar frame, and inductor core, wherein a portion of the pillar frame is removed to form inductor pillars around the inductor core; a first interconnect structure formed over a first surface of the encapsulant; and a second interconnect structure formed over a second surface of the encapsulant opposite the first interconnect structure, the first and second interconnect structures being electrically connected to the inductor pillars to form one or more 3D inductors. - View Dependent Claims (22, 23, 24, 25)
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Specification