Hydrogen Sensor

• US 20100290050A1
• Filed: 02/23/2007
• Published: 11/18/2010
• Est. Priority Date: 03/20/2006
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Atsumitec
• Original Assignee: Kabushiki Kaisha Atsumitec
• Inventors: Uchiyama, Naoki
• Application Number:
  US12/225,320
• Publication Number:
  US 20100290050A1
• Time in Patent Office: Days
• US Class Current: 356/445
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G01N 2021/7773 Reflection
• CPC Class Codes: G01N 21/783 for analysing gases
• CPC Class Codes: G01N 33/005 H2

Abstract

A hydrogen sensor includes a thin film layer formed over a substrate of resin or the like, and a catalyst layer formed on a surface of the thin film layer. When contacted by leaked hydrogen gas, the catalyst layer quickly hydrogenates the thin film layer through its catalytic action, thereby causing a change in optical reflectance of the thin film layer. The hydrogen sensor includes a protective film formed at least either between the substrate and the thin film layer or on a surface of the catalyst layer.

Claims

1. A hydrogen sensor comprising:

a substrate;

a thin film layer formed over the substrate; and

a catalyst layer formed on a surface of the thin film layer for causing the thin film layer to be hydrogenated by hydrogen gas in an atmosphere, thereby causing a change in optical reflectance of the thin film layer;

wherein a protective film is formed at least between the substrate and the thin film layer or on a surface of the catalyst layer.

2. The hydrogen sensor according to claim 1,

wherein said thin film layer is a magnesium-nickel alloy thin film layer or a magnesium thin film layer.

3. The hydrogen sensor according to claim 2,

wherein said catalyst layer is formed of palladium or platinum.

4. The hydrogen sensor according to claim 3,

wherein said catalyst layer has a thickness between 1 nm and 100 nm.

5. The hydrogen sensor according to claim 1,

wherein said protective film is formed of a silicon compound, a fluorine compound, a fat or an oil.

6. The hydrogen sensor according to claim 5,

wherein said protective film has a thickness between 5 nm and 200 nm.