METHOD FOR FABRICATION OF A SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
Patent Images
1. A method of manufacturing a semiconductor wafer, the method comprising:
- providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks;
transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and
performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.
5 Assignments
0 Petitions
Accused Products
Abstract
A method of manufacturing a semiconductor wafer, the method comprising: providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks.
-
Citations
20 Claims
-
1. A method of manufacturing a semiconductor wafer, the method comprising:
-
providing a base wafer comprising a semiconductor substrate, metal layers and first alignment marks; transferring a monocrystalline layer on top of said metal layers, wherein said monocrystalline layer comprises second alignment marks; and performing a lithography using an alignment based on a misalignment between said first alignment marks and said second alignment marks. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of manufacturing a semiconductor wafer, the method comprising:
-
providing a base wafer comprising a semiconductor substrate, metal layers, and first alignment marks; preparing a monocrystalline layer comprising semiconductor regions comprising partially-formed transistors, and second alignment marks; performing layer transfer of said monocrystalline layer on top of said metal layers; and finalizing forming said transistors after said layer transfer. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. A method of manufacturing a semiconductor wafer, the method comprising:
-
providing a base wafer comprising a semiconductor substrate, metal layers, and first alignment marks; preparing a monocrystalline layer comprising semiconductor regions, and second alignment marks; performing layer transfer of said monocrystalline layer, first to a carrier and then on top of said metal layers; and etching said monocrystalline layer to define individual transistors. - View Dependent Claims (15, 16, 17, 18, 19, 20)
-
Specification