LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME

• US 20100295015A1
• Filed: 04/27/2010
• Published: 11/25/2010
• Est. Priority Date: 05/21/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: JUNG, Myung Hoon, KANG, Dae Sung
• Granted Patent: US 8,796,707 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: F21K 9/23 Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting device includes a plurality of clusters spread on a surface of a substrate and a first semiconductor layer provided over the plurality of clusters. The first semiconductor layer may includes air gaps above the plurality of clusters. In addition, light emitting structure may include a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

Claims

1. A light emitting device comprising:

a substrate;

a plurality of clusters spread on a surface of the substrate;

a first semiconductor layer provided over the plurality of clusters, wherein the first semiconductor layer includes air gaps provided above the plurality of clusters; and

a light emitting structure including a first conductive semiconductor layer adjacent to the first semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer.

2. The light emitting device of claim 1, wherein the clusters comprise a MgN clusters or a Mg clusters.

3. The light emitting device of claim 1, wherein the air gaps are aligned with the clusters.

4. The light emitting device of claim 1, wherein the substrate comprises at least one of a buffer layer of at least one of Group II to VI elements, an undoped semiconductor layer or a doped semiconductor layer under the cluster layer.

5. The light emitting device of claim 1, wherein the first semiconductor layer includes at least one of an undoped semiconductor layer, a nonconductive semiconductor layer or a conductive semiconductor layer.

6. The light emitting device of claim 1, further comprising a second semiconductor layer between the first semiconductor layer and the first conductive semiconductor layer.

7. The light emitting device of claim 6, wherein the second semiconductor layer includes a super lattice structure.

8. The light emitting device of claim 1, wherein at least one of the air gaps of the first semiconductor layer has a conical shape.

9. The light emitting device of claim 1, wherein the substrate is a conductive type substrate.

10. The light emitting device of claim 1, further comprising a first electrode coupled to the first conductive type semiconductor and a second electrode coupled to the second conductive type semiconductor.

11. The light emitting device of claim 1, wherein the air gaps are aligned.

12. The light emitting device of claim 1, wherein a contact area between the first semiconductor layer and the substrate is larger than a contact area between the first semiconductor layer and the cluster layer.

13. The light emitting device of claim 1, wherein the substrate is made of silicon.

14. The light emitting device of claim 1, further comprising at least one of a transmittive electrode layer or a reflective electrode layer on the second conductive semiconductor layer.

15. A light emitting device package having the light emitting device of claim 1, and having a package body and a plurality of lead electrodes on the package body.

16. The light emitting device package of claim 19, further comprising a molding member covering the light emitting device.