FIELD EFFECT TRANSISTOR FABRICATION FROM CARBON NANOTUBES
First Claim
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1. A field effect transistor, comprising:
- an insulating material defining a pore, the pore including a catalyst for growing a carbon nanotube;
a semiconducting carbon nanotube grown from the catalyst within the pore, the nanotube having two ends;
a drain in electrical communication with one end of said nanotube;
a source in electrical communication with the other end of said nanotube; and
a gate surrounding a portion of said nanotube intermediate of the two ends.
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Abstract
Methods and apparatus for an electronic device such as a field effect transistor. One embodiment includes fabrication of an FET utilizing single walled carbon nanotubes as the semiconducting material. In one embodiment, the FETs are vertical arrangements of SWCNTs, and in some embodiments prepared within porous anodic alumina (PAA). Various embodiments pertain to different methods for fabricating the drains, sources, and gates.
116 Citations
59 Claims
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1. A field effect transistor, comprising:
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an insulating material defining a pore, the pore including a catalyst for growing a carbon nanotube; a semiconducting carbon nanotube grown from the catalyst within the pore, the nanotube having two ends; a drain in electrical communication with one end of said nanotube; a source in electrical communication with the other end of said nanotube; and a gate surrounding a portion of said nanotube intermediate of the two ends. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for fabricating an electronic device, comprising:
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providing a porous template of an electrically insulating material, each pore including at least one vertically oriented carbon nanotube; establishing a common electrical connection among one end of each carbon nanotube; placing a first dielectric material in each pore of the template; removing a portion of the insulating material and exposing a portion of the first dielectric material; placing a conducting material around the exposed portions of the first dielectric material; and surrounding the conducting material with a second dielectric material. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for fabricating an electronic device, comprising:
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providing an electrically insulating substrate; placing a pattern of electrodes on the substrate; depositing an electrically insulating material on at least a portion of the electrodes; removing a portion of the deposited insulating material and exposing an area of an electrode; depositing aluminum within the exposed area; and anodizing the deposited aluminum and creating a plurality of vertical pores. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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30. The method of claim 29 which further comprises growing carbon nanotubes within at least one pore.
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30-1. A method for fabricating an electronic device, comprising:
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providing a first insulating material having a porous array, each pore including a nanotube, each pore having an end proximate to a conductive layer placing the insulating material next to a dielectric material; depositing a first conductive material within each pore and establishing electrical communication between the nanotube and the conductive layer; depositing a second insulating material on at least a portion of the deposited first conductive material; and depositing a second conductive material on at least a portion of the deposited second insulating material.
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32. The method of claim 31 wherein the first conductive material includes palladium.
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33. The method of claim 31 wherein the conductive layer includes titanium.
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34. The method of claim 31 wherein the porous array is anodized alumina.
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35. The method of claim 31 wherein the second conductive material includes aluminum.
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36. The method of claim 31 wherein said depositing a second insulating material is by atomic layer deposition.
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37. The method of claim 31 wherein the second insulating material in alumina.
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38. The method of claim 31 wherein the device is a field effect transistor, each nanotube is surrounded by a gate, and the second conductive material provides electrical communication among the gates.
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39. A method for fabricating an electronic device, comprising:
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providing a substrate comprising an insulating material; depositing a first layer of a first conductive material on the substrate; depositing a second layer of a second conductive material on the first layer, the second conductive material being different from the first conductive material; depositing a third layer of aluminum on the second layer; anodizing the aluminum and creating a plurality of pores extending from the surface of the alumina towards the second layer; removing a portion of the second conductive layer between the end of the pore and the first conductive layer. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46, 47)
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48. A method for growing nanotubes, comprising:
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providing a substrate comprising an insulating material; depositing a first layer of a first conductive material on the substrate; depositing a second layer of a catalytic material on the first layer; depositing a third layer of material on the second layer; coating the third layer with a resist material; exposing a pattern in the resist material; etching the exposed pattern and creating a corresponding pattern of pits in the top surface of the third layer; oxidizing the third material and creating a pore from each pit that extends generally normal to the top surface of the third material. growing a nanotube within each pore from the catalytic material. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59)
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Specification