Thin film transistor, display, and electronic apparatus

• US 20100295037A1
• Filed: 03/29/2010
• Published: 11/25/2010
• Est. Priority Date: 05/21/2009
• Status: Abandoned Application

• Current Assignee: JOLED Inc.
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hironaka, Katsuyuki
• Application Number:
  US12/662,033
• Publication Number:
  US 20100295037A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide.

Claims

1. A thin film transistor comprising:

a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer,

wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.

2. The thin film transistor according to claim 1,

wherein those portions of the source electrode and the drain electrode which are in contact with the semiconductor layer are formed by use of iridium or iridium oxide.

3. The thin film transistor according to claim 2,

wherein the semiconductor layer is covered with an insulating film which has an oxide material.

4. The thin film transistor according to claim 3,

wherein the insulating film having the oxide material is provided in contact with the semiconductor layer.

5. The thin film transistor according to claim 4,

wherein one of the insulating film is a gate insulating film.

6. The thin film transistor according to claim 1,

wherein the semiconductor layer is covered with an insulating film which has an oxide material.

7. The thin film transistor according to claim 6,

wherein the insulating film having the oxide material is provided in contact with the semiconductor layer.

8. The thin film transistor according to claim 6,

wherein one of the insulating film is a gate insulating film.

9. A display comprising:

a thin film transistor and a pixel electrode connected to the thin film transistor, the thin film transistor including a source electrode and a drain electrode which are provided in contact with a semiconductor layer having an amorphous oxide,

wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.

10. An electronic apparatus comprising:

a thin film transistor including a source electrode and a drain electrode which are provided in contact with a semiconductor layer having an amorphous oxide,

wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.