Thin film transistor, display, and electronic apparatus
First Claim
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1. A thin film transistor comprising:
- a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer,wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.
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Abstract
Disclosed herein is a thin film transistor including: a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer. The source electrode and the drain electrode are formed by use of iridium or iridium oxide.
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Citations
10 Claims
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1. A thin film transistor comprising:
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a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer, wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display comprising:
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a thin film transistor and a pixel electrode connected to the thin film transistor, the thin film transistor including a source electrode and a drain electrode which are provided in contact with a semiconductor layer having an amorphous oxide, wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.
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10. An electronic apparatus comprising:
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a thin film transistor including a source electrode and a drain electrode which are provided in contact with a semiconductor layer having an amorphous oxide, wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.
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Specification