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Thin film transistor, display, and electronic apparatus

  • US 20100295037A1
  • Filed: 03/29/2010
  • Published: 11/25/2010
  • Est. Priority Date: 05/21/2009
  • Status: Abandoned Application
First Claim
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1. A thin film transistor comprising:

  • a semiconductor layer including an amorphous oxide, and a source electrode and a drain electrode which are provided in contact with the semiconductor layer,wherein the source electrode and the drain electrode are formed by use of iridium or iridium oxide.

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