DISPLAY

• US 20100295041A1
• Filed: 08/02/2010
• Published: 11/25/2010
• Est. Priority Date: 11/10/2004
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.), Japan Science & Technology Trading Co. Limited, Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.), Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Inventors: Kumomi, Hideya, Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo
• Granted Patent: US 8,237,166 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Claims

1. An active matrix display comprising:

an electroluminescent device; and

a field effect transistor for driving the electroluminescent device,

wherein an active layer of the field effect transistor comprises an amorphous oxide having an electron carrier concentration of less than 10¹⁸/cm³.

2. The active matrix display according to claim 1, wherein the amorphous oxide comprises an oxide containing at least one of Zn, In, and Sn.

3. An active matrix display according to claim 1, wherein the amorphous oxide is selected from the group consisting of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In.

4. The active matrix display according to claim 1, wherein the amorphous oxide comprises an oxide containing In, Ga, and Zn.

5. The active matrix display according to claim 1, wherein the electroluminescent device is arranged on a flexible resin substrate.

6. The active matrix display according to claim 1, wherein the electroluminescent device is arranged on a light transmissive substrate.

7. An active matrix display comprising:

an electroluminescent device; and

a field effect transistor for driving the electroluminescent device,

wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having

(a) a composition when in a crystalline state represented by In_2-xM3_xO₃ (Zn_1-yM2_yO)_m, wherein M2 is Mg or Ca;

M3 is B, Al, Ga or Y;

0≦

x2;

0≦

y≦

1; and

m is zero or a natural number less than 6, or a mixture of said compounds;

(b) an electron carrier concentration of 10¹²/cm³ or more and less than 10¹⁸/cm³, wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and

(c) controlled oxygen defect density resulting from subjecting the amorphous oxide to treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.

8. The active matrix display according to claim 7, wherein the amorphous oxide additionally contains at least one of Sn and a Group IV element selected from Si, Ge or Zr.

9. The active matrix display according to claim 7, wherein the amorphous oxide comprises an oxide containing In, Ga, and Zn.

10. The active matrix display according to claim 7, wherein the electroluminescent device is arranged on a flexible resin substrate.

11. The active matrix display according to claim 7, wherein the electroluminescent device is arranged on a light transmissive substrate.

12. An active matrix display comprising:

an electroluminescent device; and

a field effect transistor for driving the electroluminescent device,

wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having

(a) a composition when in a crystalline state represented by In_2-xM3_xO₃ (Zn_1-yM2_yO)_m, wherein M2 is Mg or Ca;

M3 is B, Al, Ga or Y;

0≦

x≦

2;

0≦

y≦

1; and

m is zero or a natural number less than 6, or a mixture of said compounds;

(b) an electron carrier concentration of 10¹²/cm³ or more and less than 10¹⁸/cm³, wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and

(c) oxygen defect density resulting from subjecting the amorphous oxide to treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.

13. An active matrix display comprising:

an organic electroluminescent device; and

a field effect transistor for driving the organic electroluminescent device,

wherein an active layer of the field effect transistor comprises an amorphous oxide that is selected from the group consisting of an oxide containing In, Ga and Zn, an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In and has an electron carrier concentration of 10¹²/cm³ or more and less than 10¹⁸/cm³,

wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes.

14. The active matrix display according to claim 13, containing oxygen defect density resulting from subjecting the amorphous oxide to treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.

15. An active matrix display comprising:

a light control device; and

a field effect transistor for driving the light control device,

wherein an active layer of the field effect transistor comprises an amorphous oxide that is selected from the group consisting of an oxide containing In, Ga and Zn, an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In and has

(a) an electron carrier concentration of 10¹²/cm³ or more and less than 10¹⁸/cm³, wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes; and

(b) oxygen defect density resulting from subjecting the amorphous oxide to treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.

16. The active matrix display according to claim 15, wherein the light control device comprises one of an electroluminescent device, a liquid crystal and an electrophoretic particle.