FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE

• US 20100295042A1
• Filed: 01/22/2009
• Published: 11/25/2010
• Est. Priority Date: 01/23/2008
• Status: Abandoned Application

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Inoue, Kazuyoshi, Kawashima, Hirokazu, Yano, Koki, Tomai, Shigekazu
• Application Number:
  US12/864,078
• Publication Number:
  US 20100295042A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A field effect transistor which includes an oxide film as a semiconductor layer, the oxide film has a channel part, a source part and a drain part, and the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.

Claims

1. A field effect transistor which comprises an oxide film as a semiconductor layer,

the oxide film has a channel part, a source part and a drain part, and

the channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.

2. The field effect transistor according to claim 1, wherein the oxygen concentration of each of the source part and the drain part is lower than the oxygen concentration of the channel part.

3. The field effect transistor according to claim 1, wherein the source part and the drain part are self-aligned with the gate electrode.

4. The field effect transistor according to claim 1, wherein the oxide film comprises an oxide which comprises one or more elements selected from the group consisting of In, Zn, Ga and Sn.

5. The field effect transistor according to claim 1, wherein the oxide film is an amorphous film of a composite oxide which comprises In and Zn.

6. The field effect transistor according to claim 1, wherein the oxide film is an amorphous film of a composite oxide which comprises In, Zn and Ga or an amorphous film of a composite oxide which comprises In, Zn and Al.

7. The field effect transistor according to claim 1, wherein the oxide film is an amorphous film of a composite oxide which comprises one or more elements selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Nb, B, Sc, Y and lanthanoid elements, In and Zn.

8. A display using the field effect transistor according to claim 1.

9. A method for producing a field effect transistor comprising the steps of:

forming an oxide film and

lowering the resistance of part of the oxide film to form a source part and a drain part, wherein

the oxide film has a channel part and the source part and the drain part.

10. The method for producing a field effect transistor according to claim 9, wherein the resistance of part of the oxide film is lowered by irradiating light with a short wavelength in a low oxygen partial pressure environment.

11. The method for producing a field effect transistor according to claims 9, wherein the resistance of part of the oxide film is lowered by an inert gas plasma treatment.

12. A method for producing a field effect transistor comprising the steps of:

forming an oxide film and

increasing the resistance of part of the oxide film to form a channel part, wherein

the oxide film has the channel part and a source part and a drain part.

13. The method for producing a field effect transistor according to claim 12, wherein the resistance of part of the oxide film is increased by an oxygen plasma treatment or an ozone treatment.

14. A method for producing a field effect transistor comprising the steps of:

forming an oxide film,

coating the oxide film by an insulating film, and

forming a gate electrode on the insulating film and heating the gate electrode to increase the resistance of part of the oxide film, thereby to form a channel part, wherein

the oxide film has the channel part and a source part and a drain part.

15. A semiconductor device wherein an oxide semiconductor, which is a non-degenerate semiconductor, is connected to a conductor with an oxide semiconductor, which is a degenerate semiconductor, therebetween.

16. A field effect transistor comprising a channel part which comprises an oxide semiconductor and a source part and a drain part which each comprises an oxide semiconductor,

the channel part being a non-degenerate semiconductor and at least one of the source part and the drain part being a degenerate semiconductor, and

the channel part being connected to a source electrode and a drain electrode with the source part and the drain part therebetween.

17. The field effect transistor according to claim 16, wherein at least one of the source part and the drain part has a composition different from the composition of the channel part.

18. The field effect transistor according to claim 16, wherein each of the channel part, the source part and the drain part is an oxide which comprises In.

19. The field effect transistor according to claim 16, wherein each of the channel part, the source part and the drain part is an oxide which comprises In, Zn and another element X, and

the amount ratio of the element X in all elements except oxygen is higher in the channel part than in the source part and the drain part.

20. The field effect transistor according to claim 16, wherein each of the channel part, the source part and the drain part is an oxide which comprises In, Zn and the element X, and the composition of the channel part satisfies the atomic ratio in the following region 1, 2 or 3, and the composition of each of the source part and the drain part satisfies the atomic ratio in the following region 4:

In/(In+Zn+X)=0.20 to 0.55

Zn/(In+Zn+X)=0.00 to 0.80

X/(In+Zn+X)=0.00 to 0.80 

 

Region 1

In/(In+Zn+X)=0.55 to 0.90

Zn/(In+Zn+X)=0.00 to 0.35

X/(In+Zn+X)=0.10 to 0.45 

 

Region 2

In/(In+Zn+X)=0.90 to 1.00

Zn/(In+Zn+X)=0.00 to 0.10

X/(In+Zn+X)=0.00 to 0.10 

 

Region 3

In/(In+Zn+X)=0.55 to 0.90

Zn/(In+Zn+X)=0.00 to 0.45

X/(In+Zn+X)=0.00 to 0.10 

 

Region 4

21. The field effect transistor according to claim 19, wherein the element X is an element selected from the group consisting of Ga, Al, B, Sc, Y and lanthanoids (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr and Nb.

22. The field effect transistor according to claim 16, wherein the channel part is an oxide which comprises In, Zn and the element X,

each of the source part and the drain part is an oxide which comprises In, Zn and an element Y, each of the element X and the element Y being an element selected from the group consisting of Ga, Al, B, Sc, Y, lanthanoids (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb and Sn, and

the element X and the element Y are different from each other.

23. The field effect transistor according to claim 16, wherein the channel part comprises a crystalline oxide which comprises In and one or more positive divalent elements.

24. The field effect transistor according to claim 16, wherein an etching selection ratio of the source part and the drain part to the channel part is 5 or more.

25. A field effect transistor according to claim 16, wherein at least one of the source electrode, the drain electrode and the gate electrode comprises a metal selected from the group consisting of Ti, Pt, Cr, W, Al, Ni, Cu, Mo, Ta, Au and Nb or an alloy which comprises one or more of these metals.

26. A method for producing a field effect transistor according to claim 16, which comprises the steps of:

forming a film as a channel part,

forming a film as a source part and a drain part, and

after the above-mentioned two film-forming steps, conducting a heat treatment at a temperature higher than the film-forming temperature.

27. The method for producing a field effect transistor according to claim 26, wherein, between the step of forming a channel part and the step of forming a source part and a drain part, an object to be treated is not exposed to air.

28. The method for producing a field effect transistor according to claim 26, wherein the channel part, and the source part and drain part are formed by sputtering targets which differ in composition or composition ratio.