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FIELD-EFFECT TRANSISTOR, METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE USING FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE

  • US 20100295042A1
  • Filed: 01/22/2009
  • Published: 11/25/2010
  • Est. Priority Date: 01/23/2008
  • Status: Abandoned Application
First Claim
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1. A field effect transistor which comprises an oxide film as a semiconductor layer,the oxide film has a channel part, a source part and a drain part, andthe channel part, the source part and the drain part have substantially the same composition except oxygen and an inert gas.

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