Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof

• US 20100295087A1
• Filed: 01/15/2008
• Published: 11/25/2010
• Est. Priority Date: 01/16/2007
• Status: Active Grant

• Current Assignee: Korea Photonics Technology Institute
• Original Assignee: Korea Photonics Technology Institute
• Inventors: Lee, Seung-Jae, Jhin, Jung-Geun, Kim, Yoon-Seok, Yom, Hong-Seo, Lee, Sang-Hern, Yu, Young-Moon, Kim, Sang-Mook, Baek, Jong-Hyeob
• Granted Patent: US 8,294,167 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Claims

1. A light emitting diode with high electrostatic discharge, comprising:

a first electrode provided over an upper surface of a first semiconductor layer and an upper surface of a second semiconductor layer;

a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode; and

a second electrode layer provided on the upper surface of the transparent electrode layer.

2. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the first semiconductor layer and the second semiconductor layer are different types of semiconductor layers doped with different types of impurities.

3. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the first electrode is a p-type electrode or an n-type electrode according to whether the first semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer.

4. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the second electrode is a p-type electrode or an n-type electrode according to whether the second semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer.

5. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the form of the first electrode has a predetermined part of the first electrode extending over the second semiconductor layer as a curved part.

6. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the light emitting diode is in a flip-chip structure.

7. The light emitting diode with high electrostatic discharge as set forth in claim 1, wherein the parts of the second semiconductor layer exposed between the first electrode and the transparent electrode layer spaced therefrom are formed as the parts having relatively high electric resistance by means of a plasma treatment or an oxidation treatment.

8. A fabrication method of a light emitting diode with high electrostatic discharge, comprising the steps of:

forming a first electrode extending over an upper surface of a first semiconductor layer and an upper surface of a second semiconductor layer, stacked on the upper part of the first semiconductor layer;

forming a transparent electrode layer on the upper surface of the second semiconductor layer, spaced from the first electrode; and

forming a second electrode on the upper surface of the transparent electrode layer.

9. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, further comprising the step of performing a plasma treatment or an oxidation treatment on the second semiconductor layer exposed between the first electrode and the transparent electrode layer spaced therefrom.

10. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, wherein the first electrode layer and the second electrode layer are different types of semiconductor layers doped with different types of impurities.

11. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, wherein the first electrode is a p-type electrode or an n-type electrode according to whether the first semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer.

12. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, wherein the second electrode is a p-type electrode or an n-type electrode according to whether the second semiconductor layer is a p-type semiconductor layer or an n-type semiconductor layer.

13. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, wherein the form of the first electrode has a predetermined part of the first electrode extending over the second semiconductor layer as a curved part.

14. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, further comprising stacking a light emitting layer between the first semiconductor layer and the second semiconductor layer, stacked on the upper part of the first semiconductor layer.

15. The fabrication method of the light emitting diode with high electrostatic discharge as set forth in claim 8, after forming the second electrode, further comprising the step of bonding the first electrode and the second electrode to an auxiliary substrate, in a flip-chip manner.