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SEMICONDUCTOR STORAGE DEVICE

  • US 20100295112A1
  • Filed: 03/11/2010
  • Published: 11/25/2010
  • Est. Priority Date: 05/21/2009
  • Status: Active Grant
First Claim
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1. A semiconductor storage device comprising:

  • a semiconductor substrate;

    a plurality of first insulating films formed on the semiconductor substrate with predetermined spacing therebetween;

    an element isolation region formed between the first insulating films in a first direction;

    a floating gate electrode comprising a first charge accumulation film formed on the first insulating film, a second charge accumulation film formed on the first charge accumulation film and having a width in a second direction orthogonal to the first direction smaller than the width of the first charge accumulation film, and a third charge accumulation film formed on the second charge accumulation film and having the width in the second direction larger than the width of the second charge accumulation film;

    a second insulating film formed on the second charge accumulation film and between the second charge accumulation film and the element isolation region;

    a third insulating film formed on the charge accumulation film and the element isolation region along the second direction; and

    a control gate electrode formed on the third insulating film.

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