PLASMA ETCHING METHOD FOR ETCHING AN OBJECT

• US 20100297849A1
• Filed: 07/30/2009
• Published: 11/25/2010
• Est. Priority Date: 05/22/2009
• Status: Abandoned Application

• Current Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Miyake, Masatoshi, Oyama, Masatoshi, Izawa, Masaru, Negishi, Nobuyuki, Kanekiyo, Tadamitsu
• Application Number:
  US12/512,084
• Publication Number:
  US 20100297849A1
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

The invention provides a plasma etching method capable of suppressing bowing of an opening of the object to be etched, and solving the lack of opening at a high aspect ratio portion in deep hole processing having a high aspect ratio. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched comprises sequentially performing a first step for etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas C_xF_y (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8), and a second step for etching the object to be etched while removing the deposits attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas.

Claims

1. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched, the method comprising:

etching the mask by attaching deposits on a side wall of an opening close to a surface of the patterned mask and forming a bowing on a side wall of the opening distant from the surface of the mask; and

etching the object to be etched using the mask.

10. The plasma etching method for etching an object to be etched according to claim 1, wherein

scatterometry is adopted for detecting an etching profile and performing feedback control, so as to control the etching profile stably for a long period of time.

13. The plasma etching method for etching an object to be etched according to claim 1, wherein

C₅F₆ gas having a cyclic structure is used as the etching gas composed of fluorocarbon.

2. A plasma etching method for etching an object to be etched in a plasma etching apparatus using a mask patterned and formed on the object to be etched, the method comprising:

sequentially performing a first step of etching the mask while attaching deposits on a side wall of an opening close to a surface of the mask pattern of the mask using fluorocarbon gas C_xF_y (x=1, 2, 3, 4, 5, 6, y=4, 5, 6,

     8), and a second step of etching the object to be etched while removing the deposit attached to the side wall of the opening close to the surface of the mask pattern of the mask using fluorocarbon gas C_xF_y (x=1, 2, 3, 4, 5, 6, y=4, 5, 6,

     8).

3. The plasma etching method for etching an object to be etched according to claim 2, wherein

a processing pressure of the second step performed subsequently after the first step is set lower than the processing pressure of the first step.

4. The plasma etching method for etching an object to be etched according to claim 2, wherein

a flow rate of the fluorocarbon gas C_xF_y (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8) used in the first step and the second step is set smaller in the second step than in the first step.

5. The plasma etching method for etching an object to be etched according to claim 2, wherein

a C/F ratio of the fluorocarbon gas C_xF_y (x=1, 2, 3, 4, 5, 6, y=4, 5, 6, 8) used in the first step and the second step is set smaller in the second step than in the first step.

6. The plasma etching method for etching an object to be etched according to claim 2, wherein

a flow rate of O₂ gas added to the fluorocarbon used in the first step and the second step is set greater in the second step than in the first step.

7. The plasma etching method for etching an object to be etched according to claim 2, wherein

an electrode temperature for mounting the object to be etched is set higher in the second step than in the first step.

8. The plasma etching method for etching an object to be etched according to claim 7, wherein

the etching apparatus is equipped with a direct expansion temperature control apparatus for controlling the temperature of the electrode for mounting the object to be etched.

9. The plasma etching method for etching an object to be etched according to claim 2, wherein

the processing conditions according to the first step and the second step are varied either in three or more steps or continuously.

11. The plasma etching method for etching an object to be etched according to claim 2, wherein

scatterometry is adopted in detecting an etching profile and performing feedback control, so as to control the etching profile stably for a long period of time.

12. The plasma etching method for etching an object to be etched according to claim 3, wherein

scatterometry is adopted in detecting an etching profile and performing feedback control, so as to control the etching profile stably for a long period of time.

14. The plasma etching method for etching an object to be etched according to claim 2, wherein

C₅F₆ gas having a cyclic structure is used as the etching gas composed of fluorocarbon.