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Multiple junction photovolatic devices and process for making the same

  • US 20100300505A1
  • Filed: 05/26/2009
  • Published: 12/02/2010
  • Est. Priority Date: 05/26/2009
  • Status: Abandoned Application
First Claim
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1. A photovoltaic device comprising:

  • a first photoelectric conversion cell including a first p-type semiconductor layer, a first intrinsic semiconductor layer and a first n-type semiconductor layer in sequential touching contact; and

    a second photoelectric conversion cell including a second p-type semiconductor layer, a second intrinsic semiconductor layer and a second n-type semiconductor layer in sequential touching contact,wherein said first cell has a higher band gap energy than said second cell, said semiconductor layers of said cells are formed of nano-crystalline semiconductors containing silicon as a principal constituent.

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