SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode over a substrate having an insulating surface;
a first insulating film over the gate electrode;
an oxide semiconductor layer over the first insulating film;
a second insulating film over the oxide semiconductor layer; and
a source electrode and a drain electrode over the second insulating film;
wherein the source electrode and the drain electrode are each electrically connected to the oxide semiconductor layer through an opening provided in the second insulating film,wherein each of the the first insulating film and the second insulating film comprises silicon and at least one of oxygen and nitrogen elements, andwherein a channel formation region of the oxide semiconductor layer is interposed between the first insulating film and the second insulating film.
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Accused Products
Abstract
Homogeneity and stability of electric characteristics of a thin film transistor included in a circuit are critical for the performance of a display device including said circuit. An object of the invention is to provide an oxide semiconductor film with low hydrogen content and which is used in an inverted staggered thin film transistor having well defined electric characteristics. In order to achieve the object, a gate insulating film, an oxide semiconductor layer, and a channel protective film are successively formed with a sputtering method without being exposed to air. The oxide semiconductor layer is formed so as to limit hydrogen contamination, in an atmosphere including a proportion of oxygen. In addition, layers provided over and under a channel formation region of the oxide semiconductor layer are formed using compounds of silicon, oxygen and/or nitrogen.
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Citations
30 Claims
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1. A semiconductor device comprising:
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a gate electrode over a substrate having an insulating surface; a first insulating film over the gate electrode; an oxide semiconductor layer over the first insulating film; a second insulating film over the oxide semiconductor layer; and a source electrode and a drain electrode over the second insulating film; wherein the source electrode and the drain electrode are each electrically connected to the oxide semiconductor layer through an opening provided in the second insulating film, wherein each of the the first insulating film and the second insulating film comprises silicon and at least one of oxygen and nitrogen elements, and wherein a channel formation region of the oxide semiconductor layer is interposed between the first insulating film and the second insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode over a substrate having an insulating surface; a first insulating film over the gate electrode; an oxide semiconductor layer including silicon oxide over the first insulating film; a second insulating film over the oxide semiconductor layer; and a source electrode and a drain electrode over the second insulating film, wherein the source electrode and the drain electrode are each electrically connected to the oxide semiconductor layer through an opening provided in the second insulating film, wherein the first insulating film and the second insulating film each comprise silicon and at least one of oxygen and nitrogen elements, and wherein a channel formation region of the oxide semiconductor layer is interposed between the first insulating film and the second insulating film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a first insulating film comprising a silicon oxynitride film over the gate electrode; forming an oxide semiconductor layer over the first insulating film in an atmosphere comprising oxygen; stacking a second insulating film comprising a silicon oxynitride film over the oxide semiconductor layer; selectively etching the second insulating film to form a protective film; selectively etching the oxide semiconductor layer with the use of the protective film as a mask to form an island-like semiconductor layer; selectively etching part of the protective film to form a first and a second openings through the protective film; forming a conductive film over the protective film and an exposed portion of the island-like semiconductor layer in the first and the second openings; and selectively etching the conductive film to form a source electrode and a drain electrode. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a first insulating film comprising silicon and at least one of nitride and oxygen over the gate electrode; forming an oxide semiconductor layer over the first insulating film in an atmosphere comprising oxygen; stacking a second insulating film comprising silicon and at least one of nitride and oxygen over the oxide semiconductor layer; and forming a source electrode and a drain electrode over the second insulating film, wherein the source electrode and the drain electrode are in contact with the oxide semiconductor layer through at least one opening in the second insulating film. - View Dependent Claims (28, 29, 30)
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Specification