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High Voltage Insulated Gate Bipolar Transistors with Minority Carrier Diverter

  • US 20100301335A1
  • Filed: 09/10/2009
  • Published: 12/02/2010
  • Est. Priority Date: 06/02/2009
  • Status: Active Grant
First Claim
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1. A high power insulated gate bipolar junction transistor (“

  • IGBT”

    ), comprising;

    a wide band gap semiconductor bipolar junction transistor (“

    BJT”

    ) having a collector, an emitter and a base;

    a wide band gap semiconductor MOSFET that is configured to provide a current to the base of the BJT; and

    a minority carrier diversion semiconductor layer on the base of the BJT, the minority carrier diversion semiconductor layer having a conductivity type opposite the conductivity type of the base of the BJT and forming a heterojunction with the base of the BJT.

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