Metal oxynitride thin film transistors and circuits
First Claim
1. A metal oxynitride thin film transistor with improved charge carrier mobility:
- a first substrate;
a first gate electrode;
a first gate insulating layer;
a source electrode;
a drain electrode; and
a first metal oxynitride channel layer.
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Abstract
Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.
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Citations
20 Claims
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1. A metal oxynitride thin film transistor with improved charge carrier mobility:
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a first substrate; a first gate electrode; a first gate insulating layer; a source electrode; a drain electrode; and a first metal oxynitride channel layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A CMOS circuit with improved charge carrier mobility comprising:
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a first p-channel metal oxynitride thin film transistor having a p-type metal oxynitride channel layer, a first gate electrode, a first gate insulator, a first source electrode, and a first drain electrode, and a second n-channel metal oxynitride thin film transistor having a n-type metal oxynitride channel layer, a second gate electrode, a second gate insulator, a second source electrode, and a second drain electrode, wherein said first gate electrode is connected to said second gate electrode and first drain electrode is connected to said second drain electrode. - View Dependent Claims (11, 12, 13)
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14. A circuit of metal oxynitride thin film transistors with improved charge carrier mobility comprising:
- a plurality of thin film transistors, each with a metal oxynitride active channel layer.
- View Dependent Claims (15, 16, 17, 18, 19, 20)
Specification