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METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP

  • US 20100301379A1
  • Filed: 11/21/2008
  • Published: 12/02/2010
  • Est. Priority Date: 11/29/2007
  • Status: Active Grant
First Claim
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1. A method for manufacturing a Group III nitride semiconductor, comprising:

  • a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, whereinsaid sputtering step includes respective substeps of;

    a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T1; and

    a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature T2 which is lower than the temperature T1.

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