MEMS Devices and Methods of Manufacture Thereof
First Claim
1. A micro-electromechanical system (MEMS) device, comprising:
- a buried oxide layer disposed over a substrate;
a first semiconductive material disposed over the buried oxide layer;
at least one trench disposed in the first semiconductive material and the buried oxide layer, the at least one trench comprising a first sidewall and a second sidewall opposite the first sidewall;
an insulating material layer disposed over at least a portion of the first sidewall of the at least one trench, wherein the insulating material layer is not an air gap;
a second semiconductive material disposed within the at least one trench; and
a first gap disposed in an upper portion of the at least one trench, the first gap being disposed between the second semiconductive material and the second sidewall of the at least one trench in the first semiconductive material.
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Accused Products
Abstract
Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.
24 Citations
20 Claims
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1. A micro-electromechanical system (MEMS) device, comprising:
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a buried oxide layer disposed over a substrate; a first semiconductive material disposed over the buried oxide layer; at least one trench disposed in the first semiconductive material and the buried oxide layer, the at least one trench comprising a first sidewall and a second sidewall opposite the first sidewall; an insulating material layer disposed over at least a portion of the first sidewall of the at least one trench, wherein the insulating material layer is not an air gap; a second semiconductive material disposed within the at least one trench; and a first gap disposed in an upper portion of the at least one trench, the first gap being disposed between the second semiconductive material and the second sidewall of the at least one trench in the first semiconductive material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A micro-electromechanical system (MEMS) device, comprising:
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a oxide layer disposed over a workpiece; a first semiconductive material disposed over the oxide layer; a first trench disposed in the first semiconductive material and the oxide layer, the trench comprising a first sidewall and a second sidewall opposite the first sidewall; an insulating material layer disposed over the first semiconductive material, a first portion of the insulating material layer disposed over at least a portion of the first sidewall of the first trench, wherein the insulating material layer comprises an oxide or a nitride material; a conductive material disposed within and over the first trench, the conductive material contacting the first portion of the insulating material layer; and a first gap disposed in an upper portion of the first trench, the first gap being disposed between the conductive material and the second sidewall of the first trench. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of manufacturing a micro-electromechanical system (MEMS) device, the method comprising:
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providing a workpiece, the workpiece comprising a substrate, a buried oxide layer disposed over the substrate, and a first semiconductive material disposed over the buried oxide layer, the first semiconductive material having a top surface; forming at least one trench in the first semiconductive material, exposing a top surface of the buried oxide layer at the bottom of the at least one trench, the at least one trench comprising a first sidewall and a second sidewall opposite the first sidewall; forming an insulating material layer over the first and second sidewalls of the at least one trench, and the top surface of the buried oxide layer; disposing a second semiconductive material or a conductive material over the insulating material layer; removing portions of the second semiconductive material or the conductive material thereby leaving the second semiconductive material or the conductive material within the at least one trench; and removing the insulating material layer from over the second sidewall of the at least one trench. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification