FILM DEPOSITION METHOD, FILM DEPOSITION APPARATUS, AND GAS BARRIER FILM

• US 20100304155A1
• Filed: 05/28/2010
• Published: 12/02/2010
• Est. Priority Date: 05/29/2009
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: FUJINAMI, TATSUYA, HASEGAWA, MASATAKA
• Application Number:
  US12/789,667
• Publication Number:
  US 20100304155A1
• Time in Patent Office: Days
• US Class Current: 428/446
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C23C 16/545 for coating elongated substrates

Abstract

A film deposition method comprises the steps of: transporting on a given transport path a long length of flexible film passed over a surface of a drum that is rotatably provided in a chamber evacuated to a given degree of vacuum; applying a radio-frequency voltage to a film deposition space created between a film deposition electrode and the surface of the drum to generate an electric field in the film deposition space; supplying a feed gas for film deposition into the film deposition space; and limiting an area where the feed gas is supplied so that an area where the electric field is generated in the film deposition space is large enough to cover the area where the feed gas is supplied.

Claims

1. A film deposition method comprising the steps of:

transporting on a given transport path a long length of flexible film passed over a surface of a drum that is rotatably provided in a chamber evacuated to a given degree of vacuum;

applying a radio-frequency voltage to a film deposition space created between a film deposition electrode and the surface of the drum to generate an electric field in the film deposition space, the film deposition electrode being disposed opposite the surface of the drum through the intermediary of the flexible film passed over the drum with a distance from the surface of the drum;

supplying a feed gas for film deposition into the film deposition space; and

limiting an area where the feed gas is supplied so that an area where the electric field is generated in the film deposition space is large enough to cover the area where the feed gas is supplied.

2. The film deposition method according to claim 1,

wherein the film deposition electrode is a shower head electrode having through-holes for ejecting the feed gas,

the area where the feed gas is supplied being limited by closing at least those of the through-holes of the shower head electrode that are positioned in a range located within a first distance from each end of the shower head electrode in a circumferential direction of the drum.

3. The film deposition method according to claim 2, wherein the area where the feed gas is supplied is limited by closing also those of the through-holes of the shower head electrode that are positioned in a range located within a second distance from each end of the shower head electrode in an axial direction of the drum.

4. The film deposition method according to claim 1, wherein a film deposition rate at a point located 25 mm inwardly from edges of the film deposition electrode is not greater than 30% of a film deposition rate at a center of the film deposition electrode.

10. A gas barrier film comprising:

a flexible film; and

a gas barrier film formed on a surface of the flexible film using the film deposition method according to claim 1.

5. A film deposition apparatus comprising:

a chamber;

an evacuation means for evacuating the chamber to a given degree of vacuum;

a rotatable drum disposed in the chamber;

a transport means for transporting a long length of flexible film passed over a surface of the drum on a given transport path;

a film deposition electrode disposed opposite the surface of the drum through the intermediary of the flexible film passed over the drum with a distance from the surface of the drum so that a film deposition space is created between the surface of the drum and the film deposition electrode;

an electric power supply means for applying a radio-frequency voltage between the film deposition electrode and the surface of the drum to generate an electric field in the film deposition space;

a feed gas supply means for supplying a feed gas for film deposition into the film deposition space; and

a limiting means for limiting an area where the feed gas is supplied by the feed gas supply means so that an area where the electric field is generated in the film deposition space is large enough to cover the area where the feed gas is supplied.

6. The film deposition apparatus according to claim 5,

wherein the film deposition electrode is a shower head electrode having through-holes for ejecting the feed gas,

the limiting means comprising limiter members for closing those of the through-holes of the shower head electrode that are positioned in ranges located within a first distance from each end of the shower head electrode at least in a circumferential direction of the drum.

7. The film deposition apparatus according to claim 6, wherein the limiter members close also those of the through-holes of the shower head electrode that are positioned in ranges located within a second distance from each end of the shower head electrode in an axial direction of the drum.

8. The film deposition apparatus according to claim 6,

wherein the film deposition electrode comprises a first surface facing the drum and a second surface opposite from the first surface,

the limiter members being attached to the second surface of the film deposition electrode.

9. The film deposition apparatus according to claim 6, wherein the ranges where the through-holes are closed are adjustable by the limiter members.

11. A gas barrier film comprising:

a flexible film; and

a gas barrier film formed on a surface of the flexible film using the film deposition apparatus according to claim 5.