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METHOD OF FABRICATING OXIDE THIN FILM TRANSISTOR

  • US 20100304528A1
  • Filed: 12/29/2009
  • Published: 12/02/2010
  • Est. Priority Date: 06/02/2009
  • Status: Active Grant
First Claim
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1. A method of fabricating an oxide thin-film transistor, comprising:

  • forming a gate electrode on a substrate;

    forming a gate insulation layer on the substrate;

    depositing an amorphous zinc oxide-based semiconductor layer made of an amorphous zinc oxide-based semiconductor and an amorphous zinc oxide-based insulation layer having an oxide characteristic in-situ on the gate insulation layer;

    forming an active layer made of the amorphous zinc oxide-based semiconductor over the gate electrode while at the same time forming a channel protection layer made of the amorphous zinc oxide-based insulation layer on a channel region of the active layer; and

    forming a source electrode and a drain electrode electrically connected to a source region and a drain region of the active layer over the active layer.

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