SEMICONDUCTOR PROCESSING REACTOR AND COMPONENTS THEREOF

• US 20100307415A1
• Filed: 04/05/2010
• Published: 12/09/2010
• Est. Priority Date: 04/06/2009
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM America Incorporated (ASM International NV)
• Inventors: White, Carl L., Maurice, Dan, Verghese, Mohith E., Shero, Eric, Terhorst, Herbert
• Granted Patent: US 9,394,608 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/45504 Laminar flow
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: Y10T 137/85938 Non-valved flow dividers

Abstract

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing. The exhaust assembly is operatively connected to the reaction chamber for withdrawing unreacted process gases and effluent from the reaction space.

Claims

1. A gas delivery system for delivering at least one process gas to a reaction chamber, the gas delivery system comprising:

a diffuser in fluid communication with said reaction chamber, said diffuser being attached directly to an upper surface of said reaction chamber, wherein a diffuser volume for distributing said at least one process gas is defined between said diffuser and said upper surface of said reaction chamber.

2. The gas delivery system of claim 1, wherein said diffuser includes at least one distribution surface configured to restrict flow of said at least one process gas.

3. The gas delivery system of claim 2, wherein at least a portion of said at least one distribution surface is spaced a first distance away from said upper surface of said reaction chamber and another portion of said at least one distribution surface is spaced a second distance away from said upper surface of said reaction chamber.

4. The gas delivery system of claim 3, wherein said first distance is less than said second distance, and said first distance is measured between a centerline of said distribution surface and said upper surface of said reaction chamber.

5. The gas delivery system of claim 4, wherein said first distance is between about 2.0 mm and 2.5 mm.

6. The gas delivery system of claim 5, wherein said first distance is about 2.24 mm.

7. The gas delivery system of claim 4, wherein said second distance is measured between each opposing end of said at least one distribution surface and said upper surface of said reaction chamber, and said second distance is between about 3.5 mm and 4.8 mm.

8. The gas delivery system of claim 7, wherein said second distance is about 4.0 mm.

9. The gas delivery system of claim 3, wherein said second distance is greater than said first distance, and said second distance is measured between each opposing end of said at least one distribution surface and said upper surface of said reaction chamber.

10. A diffuser for distributing at least one process gas, said diffuser comprising:

an inlet portion having a channel formed therethrough for receiving said at least one process gas; and

a distribution portion attached to said inlet portion, said distribution portion comprising a mounting surface, a first distribution surface, a second distribution surface, a third distribution surface, and a fourth distribution surface, wherein said first, second, third, and fourth distribution surfaces extend laterally between a first side surface and a second side surface, and wherein said first and second side surfaces extend between said first, second, third, and fourth distribution surfaces and said mounting surface.

11. The diffuser of claim 10, wherein said mounting surface is a substantially planar surface.

12. The diffuser of claim 10, wherein said first distribution surface is adjacent to said inlet portion, said second distribution surface is adjacent to said first distribution surface, said third distribution surface is adjacent to said second distribution surface, and said fourth distribution surface is adjacent to said third distribution surface.

13. The diffuser of claim 10, wherein said first distribution surface is sloped about 4°

with respect to said mounting surface, said second distribution surface is sloped about 10°

with respect to said mounting surface, and said fourth distributions surface is sloped about 26°

with respect to said mounting surface.

14. The diffuser of claim 10, wherein said third distribution surface is a substantially planar surface and is substantially parallel with respect to said mounting surface.

15. The diffuser of claim 10, wherein said third distribution surface is sloped between a centerline of said third distribution surface and said first and second side surfaces.

16. The diffuser of claim 15, wherein said third distribution surface has a constant slope between said centerline and said first and second side surfaces.

17. The diffuser of claim 15, wherein said centerline of said third distribution surface is vertically spaced apart from said mounting surface between about 1.0 mm and 3.0 mm, and said third distribution surface adjacent to said first and second side surfaces is vertically spaced apart from said mounting surface between about 3.0 mm and 5.0 mm.

18. The diffuser of claim 15, wherein said centerline of said third distribution surface is vertically spaced apart from said mounting surface about 2.24 mm, and said third distribution surface adjacent to said first and second side surfaces is vertically spaced apart from said mounting surface between about 4.0 mm.

19. A reactor for processing a semiconductor substrate, said reactor comprising:

a diffuser, said diffuser having at least a first wetted surface;

a reaction chamber operatively connected to said diffuser, said reaction chamber being in fluid communication with said diffuser, and said reaction chamber having at least a second wetted surface;

a surface texturing on at least one of said first and second wetted surfaces, said surface texturing having a surface roughness of between about 30-250 Ra.

20. The reactor of claim 19, wherein said surface texturing has a surface roughness of about 90 Ra.