METHOD OF MANUFACTURING FIELD-EFFECT TRANSISTOR, FIELD-EFFECT TRANSISTOR, DISPLAY DEVICE AND ELECTROMAGNETIC WAVE DETECTOR

• US 20100308325A1
• Filed: 05/27/2010
• Published: 12/09/2010
• Est. Priority Date: 06/04/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: IMAI, Shinji
• Granted Patent: US 9,214,562 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

There is provided a method of manufacturing a field-effect transistor, in which on a electroconductive layer including a source electrode, a drain electrode and pixel electrode formed by a conductive layer-forming, an inorganic insulating layer containing an inorganic material as a main component is formed so as to cover the electroconductive layer and an oxide semiconductive layer, and after a photoresist film is formed on the inorganic insulating layer and is exposed in a pattern shape, a resist pattern is formed by being developed using a developer in development, and by removing the area exposed from the resist pattern in the inorganic insulating layer by using the developer as an etching liquid, a part of the electroconductive layer is exposed, thereby forming a contact hole; a field-effect transistor, a display device and an electromagnetic wave detector.

Claims

1. A method of manufacturing a field-effect transistor including a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, a pixel electrode, an oxide semiconductor layer containing an oxide semiconductor as a main component and an inorganic insulating layer containing an inorganic material as a main component, the method comprising:

forming an electroconductive layer containing at least one of the source electrode, the drain electrode or the pixel electrode;

forming the inorganic insulating layer so as to cover the electroconductive layer and the oxide semiconductor layer;

resist-forming a photoresist film on the inorganic insulating layer;

exposing the photoresist film in a pattern shape; and

developing, using a developer, the exposed photoresist film to form a resist pattern, and removing an area of the inorganic insulating layer exposed from the resist pattern by using the developer as an etching liquid, thereby exposing a part of the electroconductive layer.

2. The method of manufacturing the field-effect transistor according to claim 1, the method further comprising:

forming an electrode layer such that the electrode layer is electrically connected to the electroconductive layer, a part of which has been exposed by the developing, through the exposed area;

wherein the electrode layer contains a metal oxide as a main component.

3. The method of manufacturing the field-effect transistor according to claim 1, wherein the oxide semiconductor layer comprises an amorphous oxide semiconductor represented by InGaO₃(ZnO)_m (m representing a natural number less than 6).

7. The method of manufacturing the field-effect transistor according to claim 1, wherein the inorganic material is a Ga-containing oxide.

9. The method of manufacturing the field-effect transistor according to claim 1, wherein the inorganic material is amorphous.

11. The method of manufacturing the field-effect transistor according to claim 1, wherein the etching liquid is an alkaline solution.

13. A field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 1.

15. A display device comprising a field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 1.

17. An electromagnetic wave detector comprising a field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 1.

4. A method of manufacturing a field-effect transistor including a substrate, a gate electrode, a gate insulating film, a source electrode, a drain electrode, a pixel electrode, an oxide semiconductor layer containing an oxide semiconductor as a main component and an inorganic insulating layer containing an inorganic material as a main component, the method comprising:

forming an electroconductive layer containing at least one of the source electrode, the drain electrode or the pixel electrode;

forming the inorganic insulating layer so as to cover the electroconductive layer and the oxide semiconductor layer;

resist-forming a photoresist film on the inorganic insulating layer;

exposing the photoresist film in a pattern shape;

forming a resist pattern by developing, using a developer, the exposed photoresist film; and

processing an area of the inorganic insulating layer exposed from the resist pattern by using an etching liquid to remove the exposed area, thereby exposing a part of the electroconductive layer.

5. The method of manufacturing the field-effect transistor according to claim 4, the method further comprising:

forming an electrode layer such that the electrode layer is electrically connected to the electroconductive layer, a part of which has been exposed by the processing, through the exposed area;

wherein the electrode layer contains a metal oxide as a main component.

6. The method of manufacturing the field-effect transistor according to claim 4, wherein the oxide semiconductor layer comprises an amorphous oxide semiconductor represented by InGaO₃(ZnO)_m (m representing a natural number less than 6).

8. The method of manufacturing the field-effect transistor according to claim 4, wherein the inorganic material is a Ga-containing oxide.

10. The method of manufacturing the field-effect transistor according to claim 4, wherein the inorganic material is amorphous.

12. The method of manufacturing the field-effect transistor according to claim 4, wherein the etching liquid is an alkaline solution.

14. A field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 4.

16. A display device comprising a field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 4.

18. An electromagnetic wave detector comprising a field-effect transistor manufactured by the method of manufacturing the field-effect transistor according to claim 4.