LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE

• US 20100308349A1
• Filed: 06/09/2010
• Published: 12/09/2010
• Est. Priority Date: 05/16/2005
• Status: Abandoned Application

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Yanashima, Katsunori, Shiomi, Michinori, Miyajima, Takao, Yasuda, Atsushi, Ohmae, Akira, Ami, Takaaki, Tomiya, Shigetaka, Tange, Takashi, Maeda, Yuki
• Application Number:
  US12/797,042
• Publication Number:
  US 20100308349A1
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

Claims

1. A light-emitting diode, comprising:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

2. A light-emitting diode, comprising:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a first pit having a first width is formed in the substrate at a bottom of the recessed portion and a second pit having a second width larger than the first width is formed in the substrate at a bottom of the recessed portion.

3. An integrated light-emitting diode having a plurality of light-emitting diodes integrated, at least one light-emitting diode comprising:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

4. A light source cell unit which comprises a printed circuit board and a plurality of cells formed on the printed circuit board, each cell containing at least one red light-emitting diode, at least one green light-emitting diode and at least one blue light-emitting diode, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface in the sixth nitride-based III-V group compound semiconductor layer arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

5. A light-emitting diode backlight which comprises plural red light-emitting diode, plural green light-emitting diode and plural blue light-emitting diode arranged in pattern, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

6. A light-emitting diode display which comprises plural red light-emitting diodes, plural green light-emitting diodes and plural blue light-emitting diodes arranged in pattern, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a

base and bends in a direction parallel to the one main surface.

7. An electronic device having at least one light-emitting diode, at least the one light-emitting diode comprising:

a substrate having at least one recessed portion on one main surface;

a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and

a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,

wherein,

a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.