DOUBLE SIDED ORGANIC LIGHT EMITTING DIODE (OLED)

• US 20100308353A1
• Filed: 02/19/2009
• Published: 12/09/2010
• Est. Priority Date: 02/22/2008
• Status: Abandoned Application

• Current Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Goldmann, Claudia Michaela, Grabowski, Stefan Peter
• Application Number:
  US12/867,898
• Publication Number:
  US 20100308353A1
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H10K 50/19 Tandem OLEDs
• CPC Class Codes: H10K 59/128 comprising two independent displays, e.g. for emitting information from two major sides of the display
• CPC Class Codes: H10K 59/32 Stacked devices having two or more layers, each emitting at different wavelengths

Abstract

The invention relates to a double sided light emitting diode device (1) comprising a transparent substrate layer (2) with a layer system, featuring at least a first emitting layer (3) and at least a second emitting layer (4).

Claims

1. A double sided light emitting diode device comprising a transparent substrate layer with a layer system, featuring at least a first emitting layer and at least a second emitting layer, wherein the layer succession on said substrate layer comprises a bottom electrode layer, said first emitting layer, a non-transparent charge-generation layer, said second emitting layer and a transparent top electrode layer and wherein said non-transparent charge-generation layer comprises a n-doping at the interface to the first emitting layer and a p-doping at the interface to the second emitting layer.

2. A double sided light emitting diode device according to claim 1, wherein said first emitting layer emits light in a first light spectrum (8) by passing said transparent substrate layer, wherein said second emitting layer emits light in a second light spectrum by passing said transparent top electrode layer.

3. A double sided light emitting diode device according to claim 1 wherein said bottom electrode layer is an anode layer comprising Indium Tin Oxide (ITO) and said top electrode layer is a cathode layer comprising silver.

4. A double sided light emitting diode device according to claim 1 wherein said non transparent charge-generation layer comprises a n-doping at the interface to the first emitting layer and a p-doping (11) at the interface to the second emitting layer.

5. A double sided light emitting diode device according to claim 1, wherein said non transparent charge-generation layer is an intermediate electrode layer comprising aluminum and having a thickness of 30 nm to 200 nm.

6. A double sided light emitting diode device according to claim 1, wherein the first emitting layer and the second emitting layer are operated by a power supply, wherein the power supply (12) of said first emitting layer is separated from the power supply (13) of said second emitting layer.

7. A double sided light emitting diode device according to claim 6, wherein the power supply (12) of said first emitting layer is performed between said bottom electrode layer operating as an anode and said charge-generation layer operating as a cathode, wherein the power supply (13) of said second emitting layer is performed between said charge-generation layer operating as an anode and said top electrode layer operating as a cathode.

12. A double sided light emitting diode device according to claim 1, wherein a light outcoupling layer comprising zinc selenide or zinc sulfide and having a thickness of approximately 15 nm to 80 nm is disposed over said top electrode layer.

13. A double sided light emitting diode device according to claim 1, wherein a light outcoupling organic layer comprising Alq₃ or α

-NPD and having a thickness of approximately 20 nm to 80 nm is disposed over said top electrode layer.

14. A double sided light emitting diode device according to claim 5, wherein said non-transparent charge-generation layer is an intermediate electrode layer comprising aluminum and having a thickness of about 80 nm.

15. A double sided light emitting diode device according to claim 1, wherein a casing comprising a transparent glass cover or a thin film encapsulation comprising one or more double layers of silicon nitride (SiN) with a thickness of approximately 200 nm and silicon oxide (SiO₂) with a thickness of approximately 100 nm is disposed over said top electrode layer.

8-11. -11. (canceled)