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COMPOUND SEMICONDUCTOR LIGHT EMITTING DIODE

  • US 20100308365A1
  • Filed: 02/06/2009
  • Published: 12/09/2010
  • Est. Priority Date: 02/07/2008
  • Status: Abandoned Application
First Claim
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1. A compound semiconductor light emitting diode comprising:

  • a device structure portion formed on one surface of a transparent base portion made of an optically transparent material, the device structure portion includinga compound semiconductor layer having a first conductivity type,a light emitting layer made of mixed crystals of aluminum gallium indium phosphide (having a composition of (AlXGa1-X)0.5In0.5P;

    0≦

    X<

    1) and having a first conductivity type or a conductivity type opposite to the first conductivity type, anda compound semiconductor layer having a conductivity type opposite to the first conductivity type; and

    a first ohmic electrode formed on the device structure portion and having a single polarity,wherein a second ohmic electrode is formed on an opposite side of the one surface of the transparent base portion, a metal coating film is formed to cover the second ohmic electrode, and a metallic pedestal portion covering the metal coating film is formed to electrically connect to the second ohmic electrode.

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