METHOD OF FABRICATING VERTICAL STRUCTURE LEDS
3 Assignments
0 Petitions
Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.
-
Citations
81 Claims
-
1-42. -42. (canceled)
-
43. A semiconductor light-emitting device, comprising:
-
a semiconductor structure having a first surface and a second surface, the semiconductor structure including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, wherein the second surface is opposite the first surface; a conductive support structure over the first surface of the semiconductor structure; a first electrode electrically connected to the first-type semiconductor layer, wherein the first electrode is located between the conductive support structure and the first surface of the semiconductor structure; a second electrode electrically connected to the second-type semiconductor layer; and a passivation layer contacting the second surface of the semiconductor structure, wherein the portion of the passivation layer that contacts the second surface is located over the conductive support structure. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81)
-
Specification